Chemical vapor deposition of large area few layer graphene on Si catalyzed with nickel films

Liu, Wei; Chung, Choong‐Heui; Miao, Congqin; Wang, Yanjie; Li, Bi-Yun; Ruan, Lingyan; Patel, Ketan; Park, Young-Ju; Woo, J.C.S.; Xie, Ya‐Hong

doi:10.1016/j.tsf.2009.10.070

Cited by 69 publications

(45 citation statements)

References 24 publications

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“…The 2D / G (0.826) for carbon nanotube/graphene composites grown by one-step CVD at 850 ∘ C is larger than others (0.599 and 0.578). The larger the 2D / G , the smaller the number of layers of graphene [19] and then the lighter the graphene weight, which also led to increasing the specific capacitance for carbon nanotube/graphene composites grown by one-step CVD at 850 ∘ C. A similar result (thicker graphene results from a higher growth temperature) has been published in previous literature [20,22]. Figure 5 shows the effects of carbon nanotube/graphene composites grown by one-step CVD at 850 ∘ C for different growing times (10,15, and 20 min) on specific capacitance.…”

Section: Resultssupporting

confidence: 78%

“…The capacitive properties of graphene films depended on the number of graphene layers, and the graphene films with three layers possessed low chargetransfer resistance as well as higher specific capacitance than those of thicker graphene films due to the close attachment of graphene films on the Ni substrate [19]. Too high carbon supply rate leads to increasing defect density of graphene and thicker graphene results from higher growth temperature [20]. Bilayer graphene can be synthesized by CVD on polycrystalline Ni films and the average defect density decreases with the increasing growing time [21].…”

Section: Introductionmentioning

confidence: 99%

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Synthesis of Carbon Nanotube/Graphene Composites by One‐Step Chemical Vapor Deposition for Electrodes of Electrochemical Capacitors

Lin

2015

Journal of Nanomaterials

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To control the packing density of carbon nanotubes (CNTs) and the number of graphene layers, carbon nanotube/graphene composites are directly grown on cobalt (Co) catalysts-coated nickel foam by one-step ambient pressure chemical vapor deposition (CVD) at different temperatures and times. The carbon nanotube/graphene composites grown by one-step CVD at 850 ∘ C for 10 min possess the highest specific capacitance. Furthermore, a lower growing temperature leads to a higher packing density of CNTs and a smaller number of layers of graphene. A shorter growing time also leads to a smaller number of layers of graphene.

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Section: Resultssupporting

confidence: 78%

Section: Introductionmentioning

confidence: 99%

Synthesis of Carbon Nanotube/Graphene Composites by One‐Step Chemical Vapor Deposition for Electrodes of Electrochemical Capacitors

Lin

2015

Journal of Nanomaterials

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“…Such multilayer graphene was synthesized on various substrates: gold, nickel, platinum and ruthenium. [8][9][10][11][12] However, a natural, the most convenient way to obtain a single layer or a few layers of graphene, is to use carbon containing electrically insulating crystals, such as diamond and silicon carbide. Diamond is technically difficult to process but silicon carbide thermal decomposition that leads to a loss of more volatile silicon is natural candidate for the graphene technology.…”

Section: Introductionmentioning

confidence: 99%

Role of structure of C-terminated4H-SiC(0001¯) surface in growth of graphene layers: Transmission electron microscopy and density functional theory studies

et al. 2012

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Principal structural defects in graphene layers, synthesized on a carbon-terminated face, i.e. the SiC(0001 ) face of a 4H-SiC substrate, are investigated using microscopic methods.Results of high-resolution transmission electron microscopy (HRTEM) reveal their atomic arrangement. Mechanism of such defects creation, directly related to the underlying crystallographic structure of the SiC substrate, is elucidated. The connection between the 4H-SiC(0001 ) surface morphology, including the presence of the single atomic steps, the sequences of atomic steps, and also the macrosteps, and the corresponding emergence of planar defective structure (discontinuities of carbon layers and wrinkles) is revealed. It is shown that disappearance of the multistep island leads to the creation of wrinkles in the graphene layers. The density functional theory (DFT) calculation results show that the diffusion of both silicon and carbon atoms is possible on a Si-terminated SiC surface at a high temperature close to 1600°C. The creation of buffer layer at the Si-terminated surface effectively blocks horizontal diffusion, preventing growth of thick graphene layer at this face.At the carbon terminated SiC surface, the buffer layer is absent leaving space for effective horizontal diffusion of both silicon and carbon atoms. DFT results show that excess carbon atoms converts a topmost carbon layer to sp 2 bonded configuration, liberating Si atoms in a) Electronic mail: jolanta.borysiuk@fuw.edu.pl 2 barrierless process. The silicon atoms escape through the channels created at the bending layers defects, while the carbon atoms are incorporated into the growing graphene layers.These results explain growth of thick graphene underneath existing graphene cover and also the creation of the principal defects at the C-terminated SiC(0001) surface.

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“…The reason behind this behavior may be explained that higher flow rates of CH 4 led to more defects of graphene. 11 This would cause higher surface area of carbon nanotube/graphene composites, which led to increasing the capacitance for carbon nanotube/graphene composites.…”

Section: Resultsmentioning

confidence: 99%

“…10 Furthermore, overly high carbon supply rates led to increasing the defect density of graphene. 11 Bilayer graphene can be synthesized by chemical vapor deposition (CVD) on polycrystalline Ni films and the average defect density decreases with increasing growing time periods. 12 The layer spacing between the graphene nanosheets controlled through interacting function nanocarbons such as CNTs might be crucial for enhancement of the storage capacity.…”

Section: ¹2mentioning

confidence: 99%

Synthesis of Carbon Nanotube/graphene Composites by Chemical Vapor Deposition for Electrodes of Solid Capacitors

Lin

2016

Electrochemistry

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To control the packing surface density of carbon nanotubes (CNTs) and the defects and numbers of graphene layers, graphene is grown on nickel foil by chemical vapor deposition (CVD) with different time periods and flow rates of methane. CNTs are then grown on the cobalt-coated (by sputtering of Co with different time) graphene/nickel foil prepared by CVD. Longer sputtering time for cobalt leads to lower capacitance of carbon nanotube/graphene composites. Furthermore, shorter growing time of graphene results in higher capacitance of carbon nanotube/ graphene composites. Higher flow rates of methane for CVD lead to higher capacitance of carbon nanotube/ graphene composites.

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Chemical vapor deposition of large area few layer graphene on Si catalyzed with nickel films

Cited by 69 publications

References 24 publications

Synthesis of Carbon Nanotube/Graphene Composites by One‐Step Chemical Vapor Deposition for Electrodes of Electrochemical Capacitors

Synthesis of Carbon Nanotube/Graphene Composites by One‐Step Chemical Vapor Deposition for Electrodes of Electrochemical Capacitors

Role of structure of C-terminated4H-SiC(0001¯) surface in growth of graphene layers: Transmission electron microscopy and density functional theory studies

Synthesis of Carbon Nanotube/graphene Composites by Chemical Vapor Deposition for Electrodes of Solid Capacitors

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