Chemical Vapor Deposition of Molybdenum Silicide

Abstract

A cold-wall reactor has been used to deposit molybdenum silicide films from a mixture of MoF~ and Sill4. The composition of the resulting films can be controlled by the deposition temperature, and MoSi2 stoichiometry is obtained with a substrate temperature of 200~ The film composition is independent of SiHcWIoF6 reactant gas ratios in the range of 1-10. The as-deposited films are generally amorphous as determined by x-ray analysis. Annealing at 950~ in argon converts the films to tetragonal polycrystalline MoSi2.

Experimental evidence for the molecular molybdenum fluorides MoF to MoF6: a matrix isolation and DFT investigation

“…Molybdenum hexafluoride is commonly used in CVD processes [1][2][3][4][5] and since the first report of its preparation in 1907 6 its vibrational spectra have been widely studied in the gas phase, [7][8][9][10][11][12][13][14] noble gas solutions, 15 solid noble gas solutions, 16 and solid cryogenic matrices. [17][18][19][20][21][22][23] Solid state structures have been obtained from X-ray powder diffraction, 24,25 single crystal X-ray diffraction, 26 low temperature Mo K-edge EXAFS, 27 as well as vapour phase structures from gas phase electron diffraction.…”

Characterizations of HfxMoyNz Alloys as Gate Electrodes for n- and p-Channel Metal Oxide Semiconductor Field Effect Transistors

“…Were are certain that the lower resistivity was caused by molybdenum silicide (MoSi 2 ) crystal formation in the Hf x Mo y N z alloys with a high nitrogen ratio (8 -14%). 14,15) Moreover, the XRD results for annealing at 700 C and those for no annealing are almost the same, except for a nitrogen ratio of 0%. However, the phase of the Hf x Mo y N z alloys changed after 900 C annealing.…”

Fermi-level depinning in Mo/Si junctions by insertion of amorphous Si-rich Mo silicide film formed via gas-phase reactions of MoF6 with SiH4

“…[17][18][19][20][21][22][23][24][25][26][27] In contrast, the reaction mechanism for Mo and MoSi n films using SiH 4 and MoF 6 source gases remains to be fully elucidated. [28][29][30] Accordingly, we investigated the n value of MoSi n film depending on the partial pressure ratio (PR) of SiH 4 to MoF 6 .…”