Chemical vapor deposition of monolayer MoS2 on sapphire, Si and GaN substrates

Yan, Pengfei; Wang, Jin; Yang, Guofeng; Lu, Naiyan; Chu, Guangyong; Zhang, Xiumei; Shen, Xiaowen

doi:10.1016/j.spmi.2018.05.049

Cited by 25 publications

(11 citation statements)

References 37 publications

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“…Measurements were done both at liquid He and room temperature; one can be assured that excitonic effects in ML TMDs are strong within these operating conditions . Triangular ML-MoS 2 samples were prepared by chemical vapor deposition (CVD) on a sapphire substrate, expectedly resulting in the growth of high-quality MoS 2 , due to the commensurability of both materials’ lattices. The MoS 2 sample was then wet-transferred onto an ML h-BN on SiO 2 /Si substrate (Figure a), which is a typical substrate used in many applications because of its suitability to Si-based electronics.…”

Section: Resultsmentioning

confidence: 99%

Selective Photoexcitation of Finite-Momentum Excitons in Monolayer MoS₂ by Twisted Light

et al. 2021

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Twisted light carries a well-defined orbital angular momentum (OAM) of ℏ per photon. The quantum number of its OAM can be arbitrarily set, making it an excellent light source to realize high-dimensional quantum entanglement and ultrawide bandwidth optical communication structures. In spite of its interesting properties, twisted light interaction with solid state materials, particularly two-dimensional materials, is yet to be extensively studied via experiments. In this work, photoluminescence (PL) spectroscopy studies of monolayer molybdenum disulfide (MoS 2 ), a material with ultrastrong light−matter interaction due to reduced dimensionality, are carried out under photoexcitation of twisted light. It is observed that the measured spectral peak energy increases for every increment of of the incident light. The nonlinear -dependence of the spectral blue shifts is well accounted for by the analysis and computational simulation of this work. More excitingly, the twisted light excitation revealed the unusual lightlike exciton band dispersion of valley excitons in monolayer transition metal dichalcogenides. This linear exciton band dispersion is predicted by previous theoretical studies and evidenced via this work's experimental setup.

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Section: Resultsmentioning

confidence: 99%

Selective Photoexcitation of Finite-Momentum Excitons in Monolayer MoS₂ by Twisted Light

et al. 2021

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“…We deposited 5 nm films of Al 2 O 3 on the Si structures. We chose Al 2 O 3 as it is one of the widely used substrates for the CVD growth of TMDs [68][69][70][71][72][73][74]. This thickness, which is larger than the exciton radius provides good electronic separation.…”

Section: Resultsmentioning

confidence: 99%

Direct Growth of Monolayer MoS$_2$ on Nanostructured Silicon Waveguides

Kuppadakkath¹,

Najafidehaghani²,

Gan³

et al. 2022

Preprint

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We report for the first time the direct growth of Molybdenum disulfide (MoS 2 ) monolayers on nanostructured silicon-on-insulator waveguides. Our results indicate the possibility of utilizing the Chemical Vapour Deposition (CVD) on nanostructured photonic devices in a scalable process. Direct growth of 2D material on nanostructures rectifies many drawbacks of the transfer-based approaches. We show that the van der Waals materials grow conformally across the curves, edges, and the silicon-SiO 2 interface of the waveguide structure. Here, the waveguide structure used as a growth substrate is complex not just in terms of its geometry but also due to the two materials (Si and SiO 2 ) involved. A transfer-free method like this yields a novel approach for functionalizing nanostructured, integrated optical architectures with an optically active direct semiconductor.

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“…Their atomically flat surface may also aid precursor migration during CVD, enhancing the thickness homogeneity of the MoS 2 layers produced. 12 Additionally, the close in-plane lattice match of MoS 2 and GaN with only 0.7 percent lattice mismatch 13 and similar hexagonal arrangement 14 have gained the interest of researchers to explore this particular heterostructure as a promising platform for electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Sulfurization engineering of single-zone CVD vertical and horizontal MoS₂ on p-GaN heterostructures for self-powered UV photodetectors

Zulkifli

Zahir²,

Ripain

et al. 2023

Nanoscale Adv.

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Chemical vapor deposition of monolayer MoS2 on sapphire, Si and GaN substrates

Cited by 25 publications

References 37 publications

Selective Photoexcitation of Finite-Momentum Excitons in Monolayer MoS₂ by Twisted Light

Selective Photoexcitation of Finite-Momentum Excitons in Monolayer MoS₂ by Twisted Light

Direct Growth of Monolayer MoS$_2$ on Nanostructured Silicon Waveguides

Sulfurization engineering of single-zone CVD vertical and horizontal MoS₂ on p-GaN heterostructures for self-powered UV photodetectors

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Chemical vapor deposition of monolayer MoS2 on sapphire, Si and GaN substrates

Cited by 25 publications

References 37 publications

Selective Photoexcitation of Finite-Momentum Excitons in Monolayer MoS2 by Twisted Light

Selective Photoexcitation of Finite-Momentum Excitons in Monolayer MoS2 by Twisted Light

Direct Growth of Monolayer MoS$_2$ on Nanostructured Silicon Waveguides

Sulfurization engineering of single-zone CVD vertical and horizontal MoS2 on p-GaN heterostructures for self-powered UV photodetectors

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Product

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Selective Photoexcitation of Finite-Momentum Excitons in Monolayer MoS₂ by Twisted Light

Selective Photoexcitation of Finite-Momentum Excitons in Monolayer MoS₂ by Twisted Light

Sulfurization engineering of single-zone CVD vertical and horizontal MoS₂ on p-GaN heterostructures for self-powered UV photodetectors