2016
DOI: 10.1021/acs.cgd.6b00601
|View full text |Cite
|
Sign up to set email alerts
|

Chemical Vapor Deposition of NbS2 from a Chloride Source with H2 Flow: Orientation Control of Ultrathin Crystals Directly Grown on SiO2/Si Substrate and Charge Density Wave Transition

Abstract: This paper reports the growth and characterization of c-axis-oriented NbS 2 thin films on SiO 2 /Si substrate by ambient pressure chemical vapor deposition (CVD) using a generic metal chloride source.We found that NbS 2 nanosheets can be grown directly on the SiO 2 /Si substrate with the aid of hydrogen gas mixed in the carrier gas. Detailed examination of the growth parameters was made possible using a separateflow CVD apparatus. It appears that the major cause of the misorientation is the off-stoichiometry w… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

8
16
0

Year Published

2018
2018
2022
2022

Publication Types

Select...
7
1

Relationship

0
8

Authors

Journals

citations
Cited by 28 publications
(24 citation statements)
references
References 48 publications
(96 reference statements)
8
16
0
Order By: Relevance
“…As a result, the nucleation of MoS2 is more likely to occur on the SiO2/Si substrate. However, the analogous growth time dependence we observed has been found in NbS2 flakes on the same substrate[112]. At the beginning of the synthesis, nucleation sites are first absorbed onto the SiO2/Si substrate.…”
supporting
confidence: 83%
“…As a result, the nucleation of MoS2 is more likely to occur on the SiO2/Si substrate. However, the analogous growth time dependence we observed has been found in NbS2 flakes on the same substrate[112]. At the beginning of the synthesis, nucleation sites are first absorbed onto the SiO2/Si substrate.…”
supporting
confidence: 83%
“…As mentioned earlier, the feeding rate of precursors and the reaction temperature are crucial factors in the CVD growth of MTMDCs. Group‐5 metal chlorides featured with low sublimation points have been proved as effective precursors for synthesizing 2D MTMDC nanosheets . Nevertheless, such group‐5 metal chlorides are easily hydrolyzed into oxides or harmful hydrogen chlorides, thus hard to be used as stable precursors.…”
Section: Preparation Methods Of 2d Mtmdcsmentioning
confidence: 99%
“…The MCl n precursors with high chemical activities can be evaporated at a relatively high rate, thus facilitating the growth of MTMDCs. Accordingly, a plenty of 2D MTMDCs have been synthesized by such CVD strategy, such as VS 2 [36,37], VSe 2 [21,43,66], TaS 2 [25], TaSe 2 [24], and NbS 2 [39][40][41]. Notably, the obtained 2D MTMDCs on SiO 2 /Si usually presented a vertical growth behavior, with as-grown nanosheets vertically oriented on the substrate surface ( figure 5(b)).…”
Section: Cvd Growth Of 2d Mtmdcs By Using Transition Metal Chlorides mentioning
confidence: 99%
“…However, a comprehensive review about the most recent progress on the preparations of 2D MTMDCs is still lacking. In this topic review, we will summarize the recent advances regarding the synthetic routes of 2D MTMDC materials (VS 2 , VSe 2 , TaS 2 , TaSe 2 , NbS 2 , NbSe 2 , etc) [23][24][25][36][37][38][39][40][41][42][43], including mechanical/chemical exfoliations, CVT, and MBE. More significantly, we will introduce the state-of-the-art CVD routes used to realize the large-scale growth of 2D MTMDCs, by using different transition metal-based feedstocks including transition metal chlorides (MCl n ) and transition metal oxidations (MO n ) mixed with alkali halides (AH, where A=Na or K, and H=Cl, Br or I).…”
Section: Introductionmentioning
confidence: 99%