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Fe 3 O 4 is a ferrimagnetic spinel ferrite that exhibits electric conductivity at room temperature (RT). Although the material has been predicted to be a half metal according

This paper reports the growth and characterization of c-axis-oriented NbS 2 thin films on SiO 2 /Si substrate by ambient pressure chemical vapor deposition (CVD) using a generic metal chloride source.We found that NbS 2 nanosheets can be grown directly on the SiO 2 /Si substrate with the aid of hydrogen gas mixed in the carrier gas. Detailed examination of the growth parameters was made possible using a separateflow CVD apparatus. It appears that the major cause of the misorientation is the off-stoichiometry with surplus Nb. The quality of the films was evaluated by X-ray diffraction and Raman spectroscopy as well as resistivity measurements at low temperatures. They showed a resistivity minimum at the same temperature of the charge density wave (CDW) transition for a bulk single crystal of 3R-NbS 2 .

Developing a technology to terminate chalcogen vacancies for transition metal dichalcogenides is a crucial task for applications, such as diodes, transistors, and sensors, because chalcogen vacancies degrade the electronic and optical properties. This article reports a healing method of S vacancies in MoS2 by high-pressure annealing under 5 atm of S vapor pressure. The crystal quality after a mechanical transfer, S annealing, and vacuum annealing was systematically studied by observing the photoluminescence (PL). The remarkable recovery of the A exciton emission peak in the PL spectrum indicated repair of the crystal quality in MoS2 by the S annealing. We also demonstrated that the S vacancies could be terminated by Se atoms using a high-pressure annealing

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