Chemical Vapor Deposition of Tantalum Oxide from Tetraethoxo(β-diketonato)tantalum(V) Complexes

Abstract

The complexes [Ta(OEt) 4 (β-diketonate)] (β-diketonate ) acetylacetonate, 2; hexafluoroacetylacetonate , 3; 1,1,1-trifluoroacetylacetonate, 4; dipivaloylmethanate, 5; 2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionate, 6) are established as volatile liquid precursors for low-pressure chemical vapor deposition (CVD) of films of tantalum(V) oxide. They give thermal CVD at a slightly lower temperature than the commonly used precursor [{Ta-(OEt) 5 } 2 ], 1. In all cases, the CVD at 300-450 °C gives amorphous films of Ta 2 O 5 , which crystallize on annealing at 800 °C under oxygen. Promotion of Ta 2 O 5 film formation is established using catalyst-enhanced CVD with a palladium precursor as "catalyst" and the minimum CVD temperature is then reduced to 200 °C.

Synthesis and Structural Characterization of a Novel Magnesium β‐Diketonatoalkoxide Complex: A New Precursor for the MOCVD of MgO

“…[8] These carbon levels also compare very favorably with those of 2±10 at.-% detected in Ta 2 O 5 films deposited by MOCVD from Ta(OEt) 4 (b-diketonate)/O 2 . [21,22] In the absence of oxygen, complex 1 is therefore effectively acting as a ªsingle sourceº precursor, and this is consistent with previous studies in which MgO …”

Growth of Hafnium Dioxide Thin Films by Liquid‐Injection MOCVD Using Alkylamide and Hydroxylamide Precursors

“…4 ], which gives kinetic-controlled HfO 2 growth in the temperature range 300±400 C, and diffusion-controlled growth at 400±500 C. [19] Although 4 ], [14] and variable O:M ratios are a common feature in metal±oxide films deposited by MOCVD from a variety of precursors. [6,23±25] Stoichiometric metal±oxide films can be readily obtained by a postgrowth anneal in air or oxygen at 600±1000 C. [6,25] Relatively high levels (9.5±10.8 at. [17] and it was noted that the carbon levels could be decreased by increasing the injected oxygen gas flow rate.…”

Investigation of New 2,5‐Dimethylpyrrolyl Titanium Alkylamide and Alkoxide Complexes as Precursors for the Liquid Injection MOCVD of TiO2

“…[43] Non-stoichiometric oxide films are frequently produced by MOCVD processes involving metal alkoxide precursors, [42,44] and stoichiometric oxide films can readily be obtained by a post-growth anneal in air or oxygen at 600 À 1000 8C. [45] The TiO x films deposited from (1) and [(MeCp)-Ti(NMe 2 ) 3 ] show a high level of carbon contamination (C ¼ 12.7 at.-%). Significantly, carbon was reportedly absent in TiO 2 films grown by MOCVD using [Ti(NMe 2 ) 4 ], [29] suggesting that the major route to carbon incorporation is the decomposition of the [2,5-dimethylpyrrolyl] 3 (dmae)] (C ¼ 2.9 À 7.7 at.-%), [31] …”