Chemical Vapor Deposition of TiN Films from Tetrakis(ethylmethylamido)titanium and Ammonia

Abstract

TiN films were prepared using a new Ti precursor, tetrakis(ethylmethylamido)titanium (TEMAT) and ammonia. The premixing of NH3 and TEMAT provided the control over the gas phase reaction of the two reactants to generate the intermediates required for the deposition of high-quality TiN films. Film resistivities of 800–1200 µ Ω-cm and low levels of impurities were obtained in TiN films deposited under the condition of low NH3/TEMAT ratios, wafer temperature of 350°C and total reactor pressure of 1 Torr. In addition, the introduction of a small amount of ammonia improved the diffusion barrier property for Cu metallization up to 600°C. Slight degradation in the conformality of TiN films was observed at the low ratio of NH3/TEMAT. Furthermore, the addition of NH3 tended to improve the surface morphology of TiN films and did not cause any particle generation due to the low process pressure of 1 Torr. X-ray photoelectron spectroscopy (XPS) analysis revealed the role of ammonia in the homogeneous reaction.

Theoretical ab initio Study of TiCl4 Ammonolysis: Gas Phase Reactions of TiN Chemical Vapor Deposition

“…[2 ] Chemical vapor deposition (CVD) usually provides high quality film and good step coverage, and it is often superior to physical vapor deposition (PVD). Several precursors such as TiCl 4 , [1,3 ] Ti(NMe 2 ) 4 , [1,4 ,5 ] Ti(NEt 2 ) 4 [1,4,6 ] and Ti(NMeEt) 4 [7 ] have been applied in titanium nitride deposition. The reaction of TiCl 4 with N 2 and H 2 (eq.…”

Synthesis of carbon-doped photocatalytic TiO2 nano-powders by AFD process

“…The peak signal at 285.0 eV (A) which corresponds to that of C-C or C-H type of carbons, the peak signal at 286.7 eV (B) which corresponds to that of C-O type of carbons, and the peak signal at 289.1 eV which corresponds to that of C5 5O type of carbons can be assigned to carbons in oxidized hydrocarbons. Only the peak signal at 281.1 eV (D) which corresponds to that of metallic carbons such as TiC type of carbons [35] can be assigned to doped-carbons. The oxidized hydrocarbon contaminants seem to originate from organic part of TTIP and 2-butanol.…”

Investigation of the Divided Deposition Method of TiN Thin Films for Metal–Insulator–Metal Capacitor Applications

“…There are two main advantages in the application of MIM structures as compared to metal-insulator-semiconductor (MIS) capacitor structures: (1) the equivalent oxide thickness (EOT) of capacitor dielectrics is decreased because metal electrodes are completely free from the depletion layer formation and (2) the low-temperature process achieves a low junction leakage current even in the transistors with the silicided source/drain. 1) Several materials have been studied for the electrodes of the MIM capacitors, including, TiN, [1][2][3][4][5] Ru, [6][7][8] and Pt. 9) In particular, TiN/Ta 2 O 5 /TiN capacitors possess large advantages in both material cost and suitability to silicon fabrication processes over capacitors with noble metals as their electrodes.…”

“…In the metal-organic chemical vapor deposition (MOCVD) process, organic metal compounds such as tetrakis dimethyl-amino titanium (TDMAT) and tetrakis diethyl-amino titanium (TEMAT) are used as precursors. This process is able to perform the TiN films with a low resistivity and low contamination of carbon or oxygen at 350 C. 4) MIM capacitors with a low leakage current were obtained using the stacked layer with CVDtungsten film and MOCVD-TiN film as the top electrode. 1) However, the dielectric film was degraded by tungsten hexafluoride as the precursor of the tungsten-CVD process.…”