Chemical vapor deposition of titanium, zirconium, and hafnium nitride thin films

Abstract

Titanium, zirconium, and hafnium nitride thin films were synthesized from tetrakis(dialkylamido)metal(IV) complexes and ammonia by atmospheric pressure chemical vapor deposition with high growth rates at low substrate temperatures (200-450 °C). Depositions were successfully carried out on silicon, low-sodium glass, soda lime glass, vitreous carbon, and boron substrates. Stainless steel and polyester were also used as substrates for depositions of titanium nitride below 250 °C. All of the films showed good adhesion to the substrates and were chemically resistant. The films were characterized by Rutherford backscattering spectrometry, X-ray photoelectron spectroscopy, ellipsometry, and transmission electron microscopy.

Copolymerization of cyclohexene oxide with CO2catalyzed by tridentate N-heterocyclic carbene titanium(iv) complexes

“…Group 4 metal silylamide chlorides are versatile starting materials for many inorganic and organometallic compounds, and have been widely used as catalysts (Lappert et al, 1980(Lappert et al, ,2009 and as precursors in chemical vapor deposition (CVD) (Just & Rees, 2000;Carmalt et al, 2005) and atomic layer deposition (ALD) of microelectronic films (Fix et al, 1990(Fix et al, ,1991Winter et al, 1994). The use of halide ligands has been established to enhance the volatility of the group 4 silylamide precursors for CVD/ALD processes (Vaartstra et al, 2006).…”

Atomic Layer Epitaxy in Deposition of Various Oxide and Nitride Thin Films

“…Temperatures below 500 ' C are difficult to achieve with these reactions because of the high chlorine contamination which weakens the film properties [83-871. Low temperature CVD processes are possible but they require different precursors like metalorganic compounds (alkylamides [88,89], metal alkyl or cyclopentadienyl compounds [86]) and methylhydrazine or tert-butylamine as nitrogen precursors [87] or the use of plasma [90] or hot filament activated [91] processes. In CVD the pyrolysis of complexes containing the metal-nitrogen bond have been used in low-temperature deposition of nitride films [92] but this process may also yield TiCN films [93].…”

Toughness Enhancement in Hard Single-Crystal Transition-Metal Nitrides : V-Mo-N and V-W-N Alloys

“…TM nitrides can usually be synthesized as single-crystalline films on selected substrates by depositing at high temperatures and by a careful control of parameters such as deposition flux and working gas pressure. TM nitrides have been synthesized by both chemical and physical vapor deposition (CVD and PVD) methods [41,[57][58][59].…”