Chemical Vapor Deposition of Tungsten

Zinn, Alfred A.

doi:10.1002/9783527615858.ch3

Cited by 15 publications

(18 citation statements)

References 166 publications

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“…10 Growth rates ranged from 18 to 24 nm min À1 producing amorphous, producing films 250 nm thick with a 3:1 ratio of oxygen to tungsten. Fluorine impurities were not detected in these films, but fluorine-doped WO 3 films can be prepared from pyrolysis of WF 6 in the presence of difluoroethane and isopropanol as the fluorine and oxygen sources. 11…”

Section: Tungsten Hexafluoridementioning

confidence: 93%

“…CVD of WO 3 from tungsten hexafluoride (WF 6 ) and tungsten carbonyl [W(CO) 6 ] precursors has received the greatest attention. Both compounds are volatile and commercially available.…”

Section: Film Growthmentioning

confidence: 99%

“…Tungsten hexafluoride, WF 6 , is widely applied as a precursor for the deposition of tungsten metal and has been used in the deposition of tungsten oxides. 4,6 Deposition of pure tungsten from WF 6 under H 2 or SiH 4 results in inclusion of some crystalline W 20 O 58 and possibly other tungsten oxide impurities in body-centered cubic (bcc) tungsten films. 7 Tungsten oxide films have been intentionally deposited from WF 6 using pure oxygen or air.…”

Section: Tungsten Hexafluoridementioning

confidence: 99%

“…Thermal decomposition of W(CO) 6 above 400°C in the absence of oxygen produces tungsten metal contaminated with carbon and oxygen. [12][13][14] Asdeposited films of this type have been referred to as 'reflective tungsten' to distinguish them from 'black tungsten' films deposited from W(CO) 6 in the presence of oxygen under the same conditions. X-ray diffraction (XRD) and Reflection High Energy Electron Diffraction (RHEED) data on black tungsten films were consistent with W 18 O 49 and either tetragonal WO 2.9 or monoclinic W 20 O 58 .…”

Section: Tungsten Hexacarbonylmentioning

confidence: 99%

“…15 Oxidation rates ranged from 1 to 2 nm min À1 , producing films from 185 to 1500 nm thick. 16,17 Decomposition of W(CO) 6 in air between 200 and 400°C produces amorphous, transparent WO 3 films with O/W % 1.83:1. The films contain metal and grow at a rate of 30-40 nm min À1 .…”

Section: Tungsten Hexacarbonylmentioning

confidence: 99%

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Chemical vapor deposition of tungsten oxide

Kirss

Meda

1998

Appl. Organometal. Chem.

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Crystalline and amorphous thin films of tungsten(VI) oxide can be prepared by chemical vapor deposition using a variety of volatile precursors below 500 °C. Deposition parameters for preparation of WO3 films from tungsten hexacarbonyl [W(CO)6], tungsten hexafluoride (WF6), tungsten ethoxides [W(OEt)x, x = 5, 6] and tetra(allyl)tungsten [W(η3‐C3H5)4] are summarized. The electrochromic behavior of these films is comparable with that observed for WO3 films prepared by evaporation, sputtering and electrodeposition. © 1998 John Wiley & Sons, Ltd.

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Section: Tungsten Hexafluoridementioning

confidence: 93%

“…CVD of WO 3 from tungsten hexafluoride (WF 6 ) and tungsten carbonyl [W(CO) 6 ] precursors has received the greatest attention. Both compounds are volatile and commercially available.…”

Section: Film Growthmentioning

confidence: 99%

Section: Tungsten Hexafluoridementioning

confidence: 99%

Section: Tungsten Hexacarbonylmentioning

confidence: 99%

Section: Tungsten Hexacarbonylmentioning

confidence: 99%

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Chemical vapor deposition of tungsten oxide

Kirss

Meda

1998

Appl. Organometal. Chem.

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[cis‐(1,3‐Diene)₂W(CO)₂] Complexes as MOCVD Precursors for the Deposition of Thin Tungsten – Tungsten Carbide Films

Jipa¹,

Heinemann²,

Schneider³

et al. 2010

Chemical Vapor Deposition

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Tungsten -tungsten carbide thin films are deposited by metal-organic (MO)CVD on silica-coated silicon wafers using [cis-(1,3-butadiene) 2 W(CO) 2 ] and [cis-(1,3-cyclohexadiene) 2 W(CO) 2 ], respectively, as tunable precursor complexes. The compounds are prepared through photochemical ligand exchange reactions from [W(CO) 6 ] and fully characterized, including X-ray structure determination and detailed differential thermal analysis (DTA)/thermogravimetry (TG) investigations. Gas-phase diffusion coefficients and the vapor pressure of the compounds are calculated. The MOCVD experiments are performed in a vertical cold-wall reactor and the exhaust gas is analyzed by gas chromatography (GC). X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM) measurements are utilized for film characterization. Consequences of the high oxophilicity of freshly formed tungsten surfaces, consecutive surface reactions of the complex ligands, film growth, and film properties are discussed. Inside the layers, tungsten carbide is identified as the main component.

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Tensile and Compressive Mechanical Properties of Polycrystalline Tungsten–Molybdenum Alloy

Zhang

et al. 2022

Physica Status Solidi (a)

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To clarify the mechanical performance of word line metal film, molecular dynamics simulations to explore the tensile and compressive responses of W–Mo alloys are utilized. The results reveal that all the mechanical parameters, including Young's modulus, yield strength, flow stress, and platform stress, decrease linearly by about 13–20% with the increase in Mo concentration. The development of the amorphous region and grain boundaries (GBs) dominates the deformation process of W–Mo alloys under tensile and compressive loadings. A large number of body‐centered cubic atoms transforms into amorphous atoms during the loading process. The average shear strain is independent of Mo concentration, and the value of the W50Mo50 sample under tension and compression rises to 1.11 and 1.98, respectively, as the strain increases from 0 to 0.6. In addition, the temperature sensitivity of mechanical features is independent of the concentration of Mo. The results may provide guidance and reference for the industrial application of W–Mo metal films in semiconductor manufacturing.

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Chemical Vapor Deposition of Tungsten

Cited by 15 publications

References 166 publications

Chemical vapor deposition of tungsten oxide

Chemical vapor deposition of tungsten oxide

[cis‐(1,3‐Diene)₂W(CO)₂] Complexes as MOCVD Precursors for the Deposition of Thin Tungsten – Tungsten Carbide Films

Tensile and Compressive Mechanical Properties of Polycrystalline Tungsten–Molybdenum Alloy

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Chemical Vapor Deposition of Tungsten

Cited by 15 publications

References 166 publications

Chemical vapor deposition of tungsten oxide

Chemical vapor deposition of tungsten oxide

[cis‐(1,3‐Diene)2W(CO)2] Complexes as MOCVD Precursors for the Deposition of Thin Tungsten – Tungsten Carbide Films

Tensile and Compressive Mechanical Properties of Polycrystalline Tungsten–Molybdenum Alloy

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[cis‐(1,3‐Diene)₂W(CO)₂] Complexes as MOCVD Precursors for the Deposition of Thin Tungsten – Tungsten Carbide Films