Chemical vapour deposition and characterization of smooth {100}-faceted diamond films

Wild, C.; Koidl, P.; Müller‐Sebert, W.; Walcher, H.; Kohl, R.; Herres, N.; Locher, R.; Samlenski, R.; Brenn, R.

doi:10.1016/0925-9635(93)90047-6

Cited by 328 publications

(116 citation statements)

References 6 publications

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“…Since the postpolishing is an expensive and time-consuming technique [128], a lot of effort has been devoted to decreasing the surface roughness of the CVD diamond films with a proper control of the gas chemistry and the deposition parameters. One way to obtain diamond films with considerable thicknesses (several tens of microns) and low surface roughness is to control the crystalline orientation with (100) facets that are parallel to the film plane [129]. A different and more flexible approach is the reduction of the film grain size (from micrometers to nanometers) by means of the growth chemistry and the surface temperature.…”

Section: Fig 14mentioning

confidence: 99%

Diamond growth by chemical vapour deposition

Grácio¹,

Fan²,

Madaleno³

2010

J. Phys. D: Appl. Phys.

255

156

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This paper reviews the growth of diamond by chemical vapour deposition (CVD). It includes the following seven parts: (1) Properties of diamond: this part briefly introduces the unique properties of diamond and their origin and lists some of the most common diamond applications. (2) Growth of diamond by CVD: this part reviews the history and the methods of growing CVD diamond. (3) Mechanisms of CVD diamond growth: this part discusses the current understanding on the growth of metastable diamond from the vapour phase. (4) Characterization of CVD diamond: we discuss the two most common techniques, Raman and XRD, which have been intensively employed for characterizing CVD diamond. (5) CVD diamond growth characteristics: this part demonstrates the characteristics of diamond nucleation and growth on various types of substrate materials. (6) Nanocrystalline diamond: in this section, we present an introduction to the growth mechanisms of nanocrystalline diamond and discuss their Raman features. This paper provides necessary information for those who are starting to work in the field of CVD diamond, as well as for those who need a relatively complete picture of the growth of CVD diamond.

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Section: Fig 14mentioning

confidence: 99%

Diamond growth by chemical vapour deposition

Grácio¹,

Fan²,

Madaleno³

2010

J. Phys. D: Appl. Phys.

255

156

View full text Add to dashboard Cite

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“…As discussed earlier, once formed, these local twinned regions would not go away. They may be suppressed by rapid overgrowth from the h100i region surrounding them or they may grow more rapidly with subsequent twin formation on the exposed {111} facets of the penetration twin forming the core of growth hillocks observed on {100} nominal surfaces, all depending on the local growth environment or the relative growth rates of the slowest growing surfaces (Wild et al 1993.…”

Section: The Modelmentioning

confidence: 99%

A mechanism for crystal twinning in the growth of diamond by chemical vapour deposition

Butler

Oleynik

2007

Phil. Trans. R. Soc. A.

107

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A model for the formation of crystal twins in chemical vapour deposited diamond materials is presented. The twinning mechanism originates from the formation of a hydrogen-terminated four carbon atom cluster on a local {111} surface morphology, which also serves as a nucleus to the next layer of growth. Subsequent growth proceeds by reaction at the step edges with one and two carbon atom-containing species. The model also provides an explanation for the high defect concentration observed in h111i growth sectors, the formation of penetration and contact twins, and the dramatic enhancement in polycrystalline diamond growth rates and morphology changes when small amounts of nitrogen are added to the plasma-assisted growth environments.

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“…The texture and morphology of a diamond cubic film (such as germanium, silicon, and diamond) that has not undergone twinning is determined by the a factor [22], or the ratio of the rate of growth on { 100} and { 111 } faces, given by a= 3100…”

Section: Fundamentals Of Polycrystalline Germanium Depositionmentioning

confidence: 99%

Single‐Crystal Germanium Growth on Amorphous Silicon

McComber

Duan

Liu

et al. 2011

Adv Funct Materials

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The integration of photonics with electronics has emerged as a leading platform for microprocessor technology and the continuation of Moore's Law. As electronic device dimensions shrink, electronic signals encounter crippling delays and heating issues such that signal transduction across large on-chip distances becomes increasingly more difficult. However, these issues may be mitigated by the use of photonic interconnects combined with electronic devices in electronic-photonic integrated circuits (EPICs).The electronics in proposed EPIC designs perform the logic operations and shortdistance signal transmission, while photonic devices serve to transmit signals over longer lengths. However, the photonic devices are large compared to electronic devices, and thus the two types of devices would ideally exist on separate levels of the microprocessor stack in order to maximize the amount of silicon substrate available for electronic device fabrication.A CMOS-compatible back-end process for the fabrication of photonic devices is necessary to realize such a three-dimensional EPIC. Back-end processing is limited in thermal budget and does not present a single-crystal substrate for epitaxial growth, however, so high-quality crystal fabrication methods currently used for photonic device fabrication are not possible in back-end processing.This thesis presents a method for the fabrication of high-quality germanium single crystals using CMOS-compatible back-end processing. Initial work on the ultra-high vacuum chemical vapor deposition of polycrystalline germanium on amorphous silicon is presented. The deposition can be successfully performed by using a pre-growth hydrofluoric acid dip and by limiting the thickness of the amorphous silicon layer to less than 120 nm. Films deposited at temperatures of 3500 C, 450* C, and 5500 C show (110) texture, though the texture is most prevalent in growths at 450* C. Poly-Ge grown at 4500 C is successfully doped n-type in situ, and the grain size of as-grown material is enhanced by lateral growth over a barrier.Structures are fabricated for the growth of Ge confined in one dimension. The growths show faceting across large areas, in contrast to as-deposited poly-Ge, corresponding to enhanced grain sizes. Growth confinement is shown to reduce the defect density as the poly-Ge grows. When coalesced into a continuous film, the material grown from 1 D confinement exhibits a lower carrier density and lower trap density than asdeposited poly-Ge, indicating improved material quality. We measure an increased grain size from as-deposited poly-Ge to Ge grown from ID confinement.Single-crystal germanium is grown at 450' C from confinement in two dimensions. Such growths exhibit faceting across the entire crystal as well as the presence of E3 boundaries ({ I 1} twins), with many growths showing no other boundaries. These twins mediate the growth of the crystal, as they serve as the points for heterogeneous surface nucleation of adatom clusters. The twins can form after the crystal nucleates and...

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Chemical vapour deposition and characterization of smooth {100}-faceted diamond films

Cited by 328 publications

References 6 publications

Diamond growth by chemical vapour deposition

Diamond growth by chemical vapour deposition

A mechanism for crystal twinning in the growth of diamond by chemical vapour deposition

Single‐Crystal Germanium Growth on Amorphous Silicon

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