No abstract

No abstract

Charge-states modulation of nitrogen-vacancy (NV) centers incorporated into single crystal diamond films attracts increasing attention for solid-state qubits applications. Here, we discuss the electro- and photoluminescence emission properties of NV centers incorporated by gas phase nitrogen delta-doping of the intrinsic diamond layer of a positive-intrinsic-negative (PIN) junction diode. The experiments show that the charge state of NV centers can be intentionally controlled by applying well-defined external bias voltages. It can be switched from the negatively charged state NV (-) to the neutral charged state NV(0) when a strong forward bias potential is applied. This can be switched back by application of reverse potentials. These results will be discussed assuming basic electronic properties of diamond PIN diodes, including the variation of spectral properties as well as the dynamics of charge state transitions

No abstract

Polycrystalline diamond films have been grown by microwave assisted chemical vapor deposition from methane/hydrogen gas mixtures. The addition of small amounts of nitrogen with concentrations below 50 ppm to the process gas was found to drastically increase the deposition rate depending on the microwave power. At 4.2 kW microwave power a five times higher growth rate compared to nitrogen-free depositions was achieved. The optical transmission and thermal conductivity have been measured. The incorporation of small amounts of nitrogen does not degrade the infrared transmission of the samples; the thermal conductivity measured at room temperature decreased only slightly from 20.5 to 18 W/(cm K)