Chemical vapour deposition (CVD) of nickel oxide using the novel nickel dialkylaminoalkoxide precursor [Ni(dmamp′)₂] (dmamp′ = 2-dimethylamino-2-methyl-1-propanolate)

Abstract

We describe CVD of nickel oxide (NiO) thin films using a new precursor [Ni(dmamp′)2], synthesised using a readily commercially available dialkylaminoalkoxide ligand (dmamp′), which is applied to synthesis of a hole transport-electron blocking layer.

Growth of NiO Thin Films in the Presence of Water Vapor: Insights from Experiments and Theory

“…53 The I (200) /I (111) intensity ratio for the deposit obtained from Ni(thd) 2 TMEDA (Table 1) was appreciably higher than the one of the polycrystalline powder reference. This result suggested the occurrence of a net (100) preferential orientation, as previously reported for NiO films obtained via CVD, 10,31,54 layer epitaxy, 27 and sputtering. 22,23,55,56 Such a phenomenon was traced back to the fact that in the NiO crystal structure (100) planes are the most densely packed planes among the ones composed of both Ni 2+ and O 2− , so that the development of a (100) orientation reduces the surface free energy during the growth of NiO films.…”

“…15 Because the latter and, hence, functional performances are strongly dependent on the adopted preparation strategy, supported NiO thin films/nanostructures have been fabricated by various physical and chemical routes, including sputtering, 1,3,19−23 molecular beam epitaxy, 24 electron beam evaporation, 4 spray pyrolysis, 25 spin coating, 2,5,11 hydrothermal synthesis, 14 atomic layer epitaxy, 26,27 atomic layer deposition, 6,7,28,29 and chemical vapor deposition (CVD). 10,15,16,30,31 In particular, the latter presents various concurrent advantages to control material features under non-equilibrium conditions by a suitable choice of experimental parameters and of the starting precursors. 32−36 Recently, we have reported on the preparation and chemicophysical characterization of three β-diketonate−diamine Ni(II) adducts, i.e., Ni(tfa) 2 TMEDA, Ni(fod) 2 TMEDA, and Ni-(thd) 2 TMEDA (Htfa = 1,1,1-trifluoro-2,4-pentanedione, Hfod = 2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedione, Hthd = 2,2,6,6-tetramethyl-3,5-heptanedione, TMEDA = N,N,N′,N′-tetramethylethylenediamine, Figure 1), featuring promising properties as molecular precursors for the vapor phase deposition of NiO thin films.…”

Interplay between coordination sphere engineering and properties of nickel diketonate–diamine complexes as vapor phase precursors for the growth of NiO thin films

“…The volatilization onset (1% mass loss) displayed an analogous behaviour (Table 4), and the corresponding values were appreciably lower than those of variously substituted Ni ketoiminate compounds. 12 The melting points of the present complexes were lower than those of Ni(II) ketoiminates, 39 β-enamino ketoesters 28 and dialkylaminoalkoxides, 9 and, for 1 and 2, they were lower than those of many Ni (II) complexes. 1,6,12,26,29,34,[38][39][40]42,43 Isothermal analyses carried out at selected temperatures (see Fig.…”

“…Thin films and nanostructures based on nickel(II) oxide, a multi-functional and transparent p-type semiconductor (E G ≈ 3.7 eV) with high chemical stability, [1][2][3][4][5] have been extensively studied due to their manifold of attractive properties for a large variety of applications. 1,6 In addition to its use in light emitting diodes (LEDs) 7 and electrochromic 8 and solar cell devices, 9 NiO has been investigated as a ( photo)- 10,11 and electrocatalyst [12][13][14][15] for various processes of technological interest. Among the fabrication routes to supported NiO thin films/ nanoarchitectures, 11,[16][17][18][19][20][21] atomic layer deposition (ALD) [22][23][24][25][26][27] and chemical vapor deposition (CVD) 1,6,9,[12][13][14]28,29 stand out as preferred choices thanks to a plethora of benefits, encompassing conformal step coverage even on complex 3D substrates, potential upscaling, and availability of many degrees of freedom to tailor material physicochemical properties.…”

“…1,6 In addition to its use in light emitting diodes (LEDs) 7 and electrochromic 8 and solar cell devices, 9 NiO has been investigated as a ( photo)- 10,11 and electrocatalyst [12][13][14][15] for various processes of technological interest. Among the fabrication routes to supported NiO thin films/ nanoarchitectures, 11,[16][17][18][19][20][21] atomic layer deposition (ALD) [22][23][24][25][26][27] and chemical vapor deposition (CVD) 1,6,9,[12][13][14]28,29 stand out as preferred choices thanks to a plethora of benefits, encompassing conformal step coverage even on complex 3D substrates, potential upscaling, and availability of many degrees of freedom to tailor material physicochemical properties. [29][30][31][32] Since such advantages are eased by chemical surface reactions of a molecular precursor and a co-reactant, the precursor's characteristics play a key role in determining the resulting system features.…”