2014
DOI: 10.1088/1742-6596/558/1/012059
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Chemical vapour deposition growth of graphene layers on metal substrates

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Cited by 8 publications
(5 citation statements)
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“…Graphene was grown by the CVD method, which is a preferred approach to grow large-area single-or few-layer graphene [37][38][39][40]. The substrate used was a Cu foil (Alfa Aesar, 99.8% purity, 25 µm thickness).…”
Section: Fabricationmentioning
confidence: 99%
“…Graphene was grown by the CVD method, which is a preferred approach to grow large-area single-or few-layer graphene [37][38][39][40]. The substrate used was a Cu foil (Alfa Aesar, 99.8% purity, 25 µm thickness).…”
Section: Fabricationmentioning
confidence: 99%
“…The single-layer sp 2 -hybridized carbon atom graphene with one atom thickness has been intensively studied due its physical properties, including flexibility, thermal conductivity, mechanical strength, ballistic charge transport, high carrier mobility, and ambipolar transport. There are several methods to attain single-layer graphene, such as mechanical exfoliation of graphite, epitaxial growth of graphene, and chemical vapor deposition (CVD) on a metal (Cu or Ni) foil substrate [5][6][7][8]. The most suitable and promising process to obtain single-layer graphene on a larger scale is CVD growth of graphene on a metal (Cu or Ni) substrate [5,6,9].…”
Section: Introductionmentioning
confidence: 99%
“…Among the extensively used methods to synthesize graphene as mechanical exfoliation, liquidphase exfoliation, chemical synthesis, epitaxial growth on silicon carbide, Chemical Vapor Deposition (CVD) technique becomes the most popular and promising way for scalable graphene production [8][9][10][11][12][13][14]. Recent advances of CVD growth on metal substrates (Cu, Ni, Pt, Pd, Ir, Fe) led to the availability of large-scale and high-quality graphene, with controllable number of layers, limited defects and shows the best performance of graphene as transparent conductive films.…”
Section: Introductionmentioning
confidence: 99%
“…The thermal CVD itself can be realized under low pressure (LPCVD) method or atmospheric pressure (APCVD) method commonly used for production of single, bi-layer or multilayer graphene. Although CVD growth of single layer graphene, due to its superior electrical transport properties, is highly anticipated despite being real challenging, the importance of multilayer graphene has rapidly grown because of its unique advantages for flexible optoelectronics providing ultra-flexible and transparent electrical contacts [11][12][13][14][15][16][17]. In this aspect synthesis of multilayer graphene is important issue; moreover it can provide superior electrical properties with the minor trade-off with optical transmittance reduction.…”
Section: Introductionmentioning
confidence: 99%