Chemical vapour deposition growth of large single crystals of monolayer and bilayer graphene

Zhou, Hailong; Yu, Woo Jong; Liu, Lixin; Cheng, Rui; Chen, Yu; Huang, Xiaoqing; Liu, Yuan; Wang, Yang; Huang, Yu; Duan, Xiangfeng

doi:10.1038/ncomms3096

Cited by 534 publications

(467 citation statements)

References 41 publications

Supporting

Mentioning

427

Contrasting

Unclassified

Order By: Relevance

“…Generally, CVD growth of graphene involves metal catalyst such as Cu or Ni66, 67, 68, 69, 70 and there exists strong adhesion between the metal and the graphene which causes several issues such as contaminations in the product, undesired doping by the metal ions, and chemical exposure in the metal etching, and polymer residues from the transfer process 71, 72, 73. Ceramic catalyst25, 31, 53, 74 was proposed as a metal‐free alternative.…”

Section: Catalyst‐free Direct Cvd Growth Of Graphene On Technologicalmentioning

confidence: 99%

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

et al. 2018

View full text Add to dashboard Cite

To fabricate graphene based electronic and optoelectronic devices, it is highly desirable to develop a variety of metal‐catalyst free chemical vapor deposition (CVD) techniques for direct synthesis of graphene on dielectric and semiconducting substrates. This will help to avoid metallic impurities, high costs, time consuming processes, and defect‐inducing graphene transfer processes. Direct CVD growth of graphene on dielectric substrates is usually difficult to accomplish due to their low surface energy. However, a low‐temperature plasma enhanced CVD technique could help to solve this problem. Here, the recent progress of metal‐catalyst free direct CVD growth of graphene on technologically important dielectric (SiO2, ZrO2, HfO2, h‐BN, Al2O3, Si3N4, quartz, MgO, SrTiO3, TiO2, etc.) and semiconducting (Si, Ge, GaN, and SiC) substrates is reviewed. High and low temperature direct CVD growth of graphene on these substrates including growth mechanism and morphology is discussed. Detailed discussions are also presented for Si and Ge substrates, which are necessary for next generation graphene/Si/Ge based hybrid electronic devices. Finally, the technology development of the metal‐catalyst free direct CVD growth of graphene on these substrates is concluded, with future outlooks.

show abstract

Section: Catalyst‐free Direct Cvd Growth Of Graphene On Technologicalmentioning

confidence: 99%

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

et al. 2018

View full text Add to dashboard Cite

show abstract

“…Graphene domain size versus growth rate on Cu foil in 2009–2016 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54…”

Section: The Merits Of Ultrafast Graphene Growthmentioning

confidence: 99%

“…The growth of large‐area high‐quality graphene films is fundamental for the upcoming graphene applications. Chemical vapour deposition (CVD) method offers good prospects to produce large‐size graphene films due to its simplicity, controllability and cost‐efficiency 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75. Many researches have verified that graphene can be catalytically grown on metallic substrates, like ruthenium (Ru),13, 14 iridium (Ir),15, 16 platinum (Pt),17, 18, …”

Section: Introductionmentioning

confidence: 99%

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Zhang

Qiu

et al. 2017

Advanced Science

View full text Add to dashboard Cite

The exceptional properties of graphene make it a promising candidate in the development of next‐generation electronic, optoelectronic, photonic and photovoltaic devices. A holy grail in graphene research is the synthesis of large‐sized single‐crystal graphene, in which the absence of grain boundaries guarantees its excellent intrinsic properties and high performance in the devices. Nowadays, most attention has been drawn to the suppression of nucleation density by using low feeding gas during the growth process to allow only one nucleus to grow with enough space. However, because the nucleation is a random event and new nuclei are likely to form in the very long growth process, it is difficult to achieve industrial‐level wafer‐scale or beyond (e.g. 30 cm in diameter) single‐crystal graphene. Another possible way to obtain large single‐crystal graphene is to realize ultrafast growth, where once a nucleus forms, it grows up so quickly before new nuclei form. Therefore ultrafast growth provides a new direction for the synthesis of large single‐crystal graphene, and is also of great significance to realize large‐scale production of graphene films (fast growth is more time‐efficient and cost‐effective), which is likely to accelerate various graphene applications in industry.

show abstract

“…According to previous reports,32, 33 to realize the growth of large‐sized 2D materials, it is important to decrease the nucleation density and increase the growth rate of the nuclei. To achieve that, our strategy is to compartmentalize the growth process: separating the induction stage from the growth stage.…”

mentioning

confidence: 99%

Chemical Vapor Deposition of High‐Quality Large‐Sized MoS₂ Crystals on Silicon Dioxide Substrates

et al. 2016

View full text Add to dashboard Cite

Large‐sized MoS2 crystals can be grown on SiO2/Si substrates via a two‐stage chemical vapor deposition method. The maximum size of MoS2 crystals can be up to about 305 μm. The growth method can be used to grow other transition metal dichalcogenide crystals and lateral heterojunctions. The electron mobility of the MoS2 crystals can reach ≈30 cm2 V−1 s−1, which is comparable to those of exfoliated flakes.

show abstract

Chemical vapour deposition growth of large single crystals of monolayer and bilayer graphene

Cited by 534 publications

References 41 publications

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Chemical Vapor Deposition of High‐Quality Large‐Sized MoS₂ Crystals on Silicon Dioxide Substrates

Contact Info

Product

Resources

About

Chemical vapour deposition growth of large single crystals of monolayer and bilayer graphene

Cited by 534 publications

References 41 publications

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Chemical Vapor Deposition of High‐Quality Large‐Sized MoS2 Crystals on Silicon Dioxide Substrates

Contact Info

Product

Resources

About

Chemical Vapor Deposition of High‐Quality Large‐Sized MoS₂ Crystals on Silicon Dioxide Substrates