Chemical vapour deposition of hard a-C:H films from CH2I2

Stenberg, Göran; Boman, Mats; Carlsson, Jan‐Otto

doi:10.1016/s0925-9635(97)00024-1

Cited by 6 publications

(3 citation statements)

References 16 publications

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“…Small amounts of hydrogen were detected throughout the whole thickness of the T-CVD thin films and our results, as confirmed by NRA measurements and also reported earlier, [19] coincide well with H concentrations reported in the literature, [26] whereas no hydrogen was found in the PT-CVD films. That is, the different hydrogen contents are most likely related to the modifications in transport of H 2 .…”

supporting

confidence: 93%

“…4). Reactor I has been built to verify CVD rates already published (see the literature [26] ), and to allow direct comparison, in the same geometry, between IR lampinduced deposition and thermal-plate activation. That is, the activation source was either a resistively heated BN-coated graphite plate or an IR lamp.…”

Section: Process Characteristicsmentioning

confidence: 99%

“…To relate the quantity N to the accessible reactant concentration N R we use the fact that deposition rates depend linearly on N R , [26] , as shown in Equation 3. .…”

mentioning

confidence: 99%

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Photothermal CVD of Carbon Thin Films using CH₂I₂ as the Precursor

Rashid

Landström

Ottosson

et al. 2008

Chemical Vapor Deposition

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Thin carbon films are deposited via CVD from the precursor methylene iodide (CH 2 I 2 ) using two different activation sources; a broadband IR lamp and a thermal plate. Large differences in deposition rates are observed when comparing the two sources of activation. The characteristics of the deposition kinetics of the highly sensitive system are also investigated by employing a split, symmetric reactor, and by using a qualitative model. Raman spectroscopy (RS) is used for microstructural characterization of the films. The lamp technique allows a simple and low-cost experimental setup, for deposition of disordered carbon thin films at relatively low temperatures and high rates.

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supporting

confidence: 93%

Section: Process Characteristicsmentioning

confidence: 99%