Chemical vapour deposition of Si3N4 from a gas mixture of Si2Cl6, NH3 and H2

Motojima, Seiji; Iwamori, Noriyuki; Hattori, Taku

doi:10.1007/bf00553436

Cited by 3 publications

(1 citation statement)

References 21 publications

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“…They are therefore a promising candidate for high‐temperature structural materials and surface modification coatings 1,2 . Surface films are usually fabricated at lower process temperatures by physical vapor deposition (PVD) or by thermal plasma‐enhanced chemical vapor deposition (PECVD) 3,4 . SiCl 4 or SiH 4 is conventionally used as the starting source in CVD, but the residual chlorine or hydrogen impurity in the films is undesirable for their applications, since these impurities may greatly degrade the properties of the films 5 .…”

Section: Introductionmentioning

confidence: 99%

Preparation and Corrosion Resistance of Amorphous SiN_x Films from Hexamethyldisiloxane Solution by PECVD

Shimada

2005

Journal of the American Ceramic Society

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SiN x films were deposited on Si wafer and SUS steel (Fe-18Cr-8Ni) substrate from a hexamethyldisiloxane solution by N 2 plasma-enhanced chemical vapor deposition equipped with a liquid injection device. The SiN x films with dense columnar structures were identified to be amorphous by means of X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy. An enhancement of deposition rate, in combination with a large amount of oxygen contaminant, was obtained after modifying the nozzle position from a top injection to a side injection method by providing a greater liquid supply. The corrosion performance of SiN x film-coated SUS steel was evaluated by exposure test in KCl vapor atmosphere at 6501C, indicating that the high purity SiN x film demonstrated a significantly improved resistance, while an increased remanent oxygen content inside the films produced a deleterious effect on the anti-corrosion behavior.

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Section: Introductionmentioning

confidence: 99%

Preparation and Corrosion Resistance of Amorphous SiN_x Films from Hexamethyldisiloxane Solution by PECVD

Shimada

2005

Journal of the American Ceramic Society

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Pattern-dependent microloading and step coverage of silicon nitride thin films deposited in a single-wafer thermal chemical vapor deposition chamber

Smith

Seutter

Iyer

2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Less than 10% pattern-dependent microloading and greater than 95% step coverage are required for low temperature deposition of Si3N4 spacer and etch stop films in advanced logic and dynamic random access memory semiconductor applications. A single-wafer chemical vapor deposition chamber was utilized to analyze pattern loading effect on 130 nm and 90 nm patterned wafers. With silane-ammonia chemistry as the focus, a variety of processing methods were employed utilizing continuous and cyclical deposition modes. In addition, methods to modify diffusion and/or reaction rates were studied, such as remote plasma excitation and carrier gas modifications. Finally, chemistry-related variables were evaluated by changing the Si-source precursor. It was concluded that process chemistry and specifically precursor is the most dominant factor determining pattern loading effect.

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Thermal Chemical Vapor Deposition of Bis(Tertiary-Butylamino)Silane-based Silicon Nitride Thin Films

Smith

Seutter

Iyer

2005

J. Electrochem. Soc.

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Sub-90 nm device design presents challenges for lowering thermal budget as well as depositing uniform and conformal thin films for front-end-of-line silicon nitride applications. Among other low-temperature precursors for silicon nitride film deposition, bis͑tertiary-butylamino͒silane ͑BTBAS͒ has gained acceptance for critical applications such as spacer. This paper describes BTBAS based silicon nitride film deposition process optimization for spacer and etch stop applications. The single-wafer chamber design can control and tune the film with respect to deposition rate, film composition, wet etch rate, and film mechanical stress by adjustment of process conditions such as temperature, pressure, and gas flow rates. Computational flow and thermal simulations are employed to optimize chamber design to achieve uniform thin films.

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Chemical vapour deposition of Si3N4 from a gas mixture of Si2Cl6, NH3 and H2

Cited by 3 publications

References 21 publications

Preparation and Corrosion Resistance of Amorphous SiN_x Films from Hexamethyldisiloxane Solution by PECVD

Preparation and Corrosion Resistance of Amorphous SiN_x Films from Hexamethyldisiloxane Solution by PECVD

Pattern-dependent microloading and step coverage of silicon nitride thin films deposited in a single-wafer thermal chemical vapor deposition chamber

Thermal Chemical Vapor Deposition of Bis(Tertiary-Butylamino)Silane-based Silicon Nitride Thin Films

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Chemical vapour deposition of Si3N4 from a gas mixture of Si2Cl6, NH3 and H2

Cited by 3 publications

References 21 publications

Preparation and Corrosion Resistance of Amorphous SiNx Films from Hexamethyldisiloxane Solution by PECVD

Preparation and Corrosion Resistance of Amorphous SiNx Films from Hexamethyldisiloxane Solution by PECVD

Pattern-dependent microloading and step coverage of silicon nitride thin films deposited in a single-wafer thermal chemical vapor deposition chamber

Thermal Chemical Vapor Deposition of Bis(Tertiary-Butylamino)Silane-based Silicon Nitride Thin Films

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Preparation and Corrosion Resistance of Amorphous SiN_x Films from Hexamethyldisiloxane Solution by PECVD

Preparation and Corrosion Resistance of Amorphous SiN_x Films from Hexamethyldisiloxane Solution by PECVD