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Si3N 4 layers were obtained on a quartz substrate from a gas mixture of Si2CI6, NH3 and H2 under a reduced pressure in a temperature range of 800 to 1300 ~ C. Amorphous Si3N 4 layers that were dense and adherent to the substrate were obtained in a temperature range of 800 to 1100 ~ On the other hand, ~-Si3N4 layers were obtained at 1200~ and a source-gas ratio (N/Si) of 1.33 to 1.77. The lowest deposition temperature of amorphous Si3N 4 was considered to be about 700 ~ C. The microhardness of amorphous Si3N, obtained in a temperature range of 800 to 1100~ was 2400 to 2600kg mm -2 (load: 50g), and that of ~-Si3N4 obtained at 1200~ was 3400 kg mm -2. Chlorine contents in the Si3N4 layer decreased with increasing deposition temperature and source-gas ratio (N/Si), and with decreasing total pressure.

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