Chemically prepared Pb(Zr,Ti)O/sub 3/ thin films: the effects of orientation and stress

Tuttle, Bruce A.; Voigt, J.; Garino, Terry J.; Goodnow, D.C.; Schwartz, Robert W.; Lamppa, D. L.; Headley, T. J.; Eatough, Michael O.

doi:10.1109/isaf.1992.300703

Cited by 40 publications

(32 citation statements)

References 9 publications

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“…According to Tuttle et al, 2,5 tensile stresses upon cooling from the Curie temperature create films that have high populations of a, or 90°, domains and that demonstrate a suppressed strain-field response. While the 53/ 47 composition thin films in this study are not highly tetragonal, any stress-driven preferential orientation of the polarization direction into the 1-2 plane would result in domains confined to this orientation by substrate constraints and high residual stresses.…”

Section: Discussionmentioning

confidence: 99%

“…The magnitude and sign ͑tensile or compressive͒ of the film stress are highly dependent on both the processing technique and the properties of the substrate and bottom electrode. 1 Tuttle et al 2 and others 3,4 speculate on the influence of residual stress on preferred domain orientation. Assuming that domains align in the most energetically favorable arrangements, populations of non-180°do-mains are affected by the stress state upon cooling through the Curie temperature.…”

Section: Introductionmentioning

confidence: 96%

“…The effect of substrate/ film property mismatches on residual stress has been well characterized, and changes in substrates for otherwise similar films have correspondingly altered ferroelectric properties. 2 For the PZT film and platinized silicon substrate studied in this work, the extrinsic forces result in a residual tensile film stress upon cooling.…”

Section: Introductionmentioning

confidence: 98%

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Residual stress effects on piezoelectric response of sol-gel derived lead zirconate titanate thin films

Berfield

Ong

Payne

et al. 2007

Journal of Applied Physics

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Piezoelectric properties of three sol-gel derived Pb͑Zr 0.53 Ti 0.47 ͒O 3 thin film specimens of different thicknesses integrated onto Pt/ Ti/ SiO 2 ʈ Si substrates are investigated to delineate the influence of residual stress on the strain-field response characteristics from other thickness related effects. Residual tensile stresses are determined from wafer curvature measurements for films ranging in thickness from 190 to 500 nm. Field-induced strains are measured interferometrically for each film under either a large ac driving voltage or a small ac ripple applied over a range of dc biases. Higher residual stresses decrease measured piezoelectric response, while thickness variations with no accompanying change in residual stress state produce little change in strain-field behavior. The diminished performance associated with high residual stresses is attributed to reductions in both linear and nonlinear contributions, including decreased polarization switching and domain motion.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 98%

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Residual stress effects on piezoelectric response of sol-gel derived lead zirconate titanate thin films

Berfield

Ong

Payne

et al. 2007

Journal of Applied Physics

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“…Regarding the electrical properties with residual stress level, Lee et al reported that the ferroelectric properties of (111) oriented Pb(Zr,Ti)O 3 (PZT) thin films were enhanced by inducing compressive stress, which was introduced during annealing by bending the substrate. 2,3 Tuttle et al 4 have also shown that the highly oriented PZT thin films (thickness is 300 nm) under compressive residual stress exhibited superior ferroelectric properties compared to the bulk polycrystalline ferroelectrics. However, prior studies are mostly based on the epitaxial thin films or require a special fixture to control the stress.…”

mentioning

confidence: 98%

Stress-controlled Pb(Zr0.52Ti0.48)O3 thick films by thermal expansion mismatch between substrate and Pb(Zr0.52Ti0.48)O3 film

Han

Ryu

Yoon

et al. 2011

Journal of Applied Physics

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Polycrystalline Pb(Zr0.52Ti0.48)O3 (PZT) thick films (thickness ∼10 μm) were successfully fabricated by using a novel aerosol deposition technique on Si wafer, sapphire, and single crystal yitria stabilized zirconia (YSZ) wafer substrates with Pt electrodes and their dielectric, ferroelectric, and piezoelectric properties, and in-plane stresses were investigated. The films with different stress conditions were simply controlled by the coefficient of thermal expansion (CTE) misfit of PZT films and substrates. The results showed that the films bearing in-plane compressive stress deposited on the YSZ and sapphire substrates have superior dielectric, ferroelectric (∼90%), and piezoelectric (>200%) properties over that of the Si wafer. Among these three substrates, YSZ shows superior properties of the PZT films. However, films on Si wafer with tensile stress present lower properties. We believed that in-plane compressive stresses within the films are benefited, the formation of c-domain parallel to the thickness direction resulting in the higher piezoelectric properties. These results suggest that the properties of polycrystalline PZT thick films can be adjusted by simply choosing the substrates with different CTEs.

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“…5(b) and 5(c), the histograms of nonlinear response relative to clamped and released regions are compared; spatial averages of 0:002 AE 0:010 cm=kV and 0:013 AE 0:006 cm=kV were characterized for the clamped and released regions, the latter being very close to the dielectric nonlinearity value characterized on completely clamped capacitors of the sample. This would indicate that the same population of domain walls responding to the exciting field globally in dielectric measurements can be probed at much smaller volumes ($ 0:022 m 3 ) when the diaphragms are released [40,41].…”

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confidence: 99%

Substrate Clamping Effects on Irreversible Domain Wall Dynamics in Lead Zirconate Titanate Thin Films

et al. 2012

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The role of long-range strain interactions on domain wall dynamics is explored through macroscopic and local measurements of nonlinear behavior in mechanically clamped and released polycrystalline lead zirconate-titanate (PZT) films. Released films show a dramatic change in the global dielectric nonlinearity and its frequency dependence as a function of mechanical clamping. Furthermore, we observe a transition from strong clustering of the nonlinear response for the clamped case to almost uniform nonlinearity for the released film. This behavior is ascribed to increased mobility of domain walls. These results suggest the dominant role of collective strain interactions mediated by the local and global mechanical boundary conditions on the domain wall dynamics. The work presented in this Letter demonstrates that measurements on clamped films may considerably underestimate the piezoelectric coefficients and coupling constants of released structures used in microelectromechanical systems, energy harvesting systems, and microrobots. Strain in epitaxial oxide films has become a universally recognized method for tuning materials properties [1][2][3], enabling novel couplings between magnetic, lattice, and strain behaviors [4][5][6], stabilizing new phases [7] or domain morphologies [8]. Systematic studies of a material's response to strain enable exploration of the fundamental mechanisms responsible for, e.g., the ferroelectric instability [9][10][11][12].While strain effects on intrinsic properties [9,12] and domain morphologies [13,14] are readily amenable to theoretical and experimental studies, their role on local and emergent properties [15] in disordered materials, including polycrystalline ferroelectric films and relaxors, remains virtually unexplored [16,17], Indeed, many of these materials exhibit unique physical properties including giant electromechanical coupling coefficients, broad dispersions of dielectric permittivity, etc. [18][19][20][21]. These phenomena are often associated with the presence of nanoscale textures of domains or nanoscale phase separation [22][23][24]. In all these materials, the dominant order parameter is either strain (ferroelastics) or is strongly coupled to strain (relaxors, morphotropic systems), suggesting the significant role of frustrated or random strain interactions [25][26][27]. Correspondingly, tuning mechanical boundary conditions can significantly affect emergent behaviors in disordered ferroics and provide insight into corresponding coupling mechanisms.Here, we aim to explore domain wall dynamics as reflected in ferroelectric nonlinearities in model PbZr 0:52 Ti 0:48 O 3 thin films. In polycrystalline lead zirconate-titanate (PZT) ceramics, domain wall motion may contribute more than 50% of the dielectric and piezoelectric properties at room temperature [23,28]. However, in thin films these extrinsic contributions to the piezoelectric response can be severely limited by several factors, including substrate clamping [29]. Recent spatially resolved studies of piezoelectri...

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Chemically prepared Pb(Zr,Ti)O/sub 3/ thin films: the effects of orientation and stress

Cited by 40 publications

References 9 publications

Residual stress effects on piezoelectric response of sol-gel derived lead zirconate titanate thin films

Residual stress effects on piezoelectric response of sol-gel derived lead zirconate titanate thin films

Stress-controlled Pb(Zr0.52Ti0.48)O3 thick films by thermal expansion mismatch between substrate and Pb(Zr0.52Ti0.48)O3 film

Substrate Clamping Effects on Irreversible Domain Wall Dynamics in Lead Zirconate Titanate Thin Films

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