ChemInform Abstract: Advanced Metal Oxide Semiconductor and Bipolar Devices on Bonded Silicon‐on‐Insulators

Abstract

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Numerical calculation model of a single wafer wet etcher using a swinging nozzle

“…Particularly, for fabricating a silicon-on-insulator (SOI) wafer by the wafer-bonding technique using two silicon wafers [4][5][6][7], a very clean and flat surface of silicon dioxide film for the buried oxide layer is necessary.…”

Numerical Calculation Model of Single Wafer Wet Etcher Using Swinging Nozzle

“…A(R)= -7x10 -6 R 2 -6x10 -4 R -5x10 -2 , and [4] B(R)=2x10 -3 R 2 + 2x10 -2 R + 20. [5] In the center region, the etching rate is simply assumed to a constant value, C,…”