ChemInform Abstract: Advanced Ultrapure Water by HF Addition.

Miyamoto, Mitsuo; Tatsuno, Toshio; Ohta, Yoshiharu

doi:10.1002/chin.199351300

Cited by 1 publication

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“…If the surfaetant molecules are adsorbed on the Si wafer surface according to the Langmuir type adsorption equationf where coverage (O) of the surfacrant molecule is given by @ = KC/(1 + KC) [1] where C is the concentration of the surfactant and K is the adsorption equilibrium constant. Moreover, if the dissolution of Si from the surface is suppressed where the surfactant molecules are adsorbed, the amount of dissolved Si(Ds~) is given by Dsi = D0(1 -O) [2] where Do is the amount of dissolved Si in the case when the surfactant is not added. From Eq.…”

Section: Resultsmentioning

confidence: 99%

Prevention of Microroughness Generation on the Silicon Wafer Surface in Buffered Hydrogen Fluoride by a Surfactant Addition

Miyamoto¹,

Kita²,

Ishida³

et al. 1994

J. Electrochem. Soc.

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In order to prevent microroughness generation on the Si wafer surface in buffered hydrogen fluoride (BHF), the addition of a surfactant to BHF was investigated. It was found that mieroroughness generation on the Si wafer surface in BHF was prevented by adding the several 10 ppm surfactant. Also, the dissolution of Si into BHF from the Si wafer surface was suppressed by adding the surfactant. Microroughness generation was suppressed by lowering the N[-I4F concentration in BHF and the dissolution oi Si depended on the OH concentration rather than on the HF concentration in BHE For a wide range of HF and NH4F concentrations in BHF, the hydrocarbon anionic surfactant is effective for the prevention of microroughness generation. The prevention of microroughness generation is explained by the adsorption of the surfactant molecules on the Si wafer surface in accordance with the Langmuir type adsorption equation.

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Section: Resultsmentioning

confidence: 99%