Chemischer Informationsdienst
 1977
DOI: 10.1002/chin.197711009
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ChemInform Abstract: ANNIHILATION OF STACKING FAULTS IN SILICON BY IMPURITY DIFFUSION

Hisao Hashimoto1,
Hideo Shibayama2,
H. Masaki3
et al.

Abstract: Stapelfehler, die im Si durch Wärmebehandlung in oxidierenden Atmosphären entstehen, schrumpfen während Wärmebehandlung bei 1100‐1200°C in N2 ‐Atmosphäre.

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