ChemInform Abstract: GASTRANSPORTPROZESSE IM SYST. INSB‐J2

Sandulova, A. V.; Berezhkova, G. V.; Dronyuk, M. I.; Petrushko, I. A.

doi:10.1002/chin.197242052

Cited by 4 publications

(5 citation statements)

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“…5E) studies reveal that the stripes are irregularly spaced growth steps, with height of $50 nm and interval of $100 nm. Similar growth phenomena have been reported previously in vapor-phase-grown TiC [2] and silicon [26] whiskers, in which the stripes were believed to associate with stacking faults and/or microtwins formed during whisker growth. In the present case, however, TEM (Fig.…”

supporting

confidence: 67%

Zinc Oxide Microtowers by Vapor Phase Homoepitaxial Regrowth

et al. 2009

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supporting

confidence: 67%

Zinc Oxide Microtowers by Vapor Phase Homoepitaxial Regrowth

et al. 2009

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“…Silicon wires (see Fig. 1) were grown by the technology developed by Sandulova et al [12]. This technology is based on a method of gas-phase-reaction in a sealed tube at a temperature gradient.…”

Section: Methodsmentioning

confidence: 99%

Morphology of the Interface “Silicon Wire - Nerve Fiber"

Klimovskaya¹,

Vysotskaya²,

Chaikovsky

et al. 2016

JNanoR

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Recently study of the “silicon wire - nerve tissue’ interface has been in the focus of attention due to its potential use in recovering nervous system damage caused by injuries or diseases. The key objective of this research was to test the physicochemical state of the interface and to study its properties. Although much research has been done in this field, the process of interface formation was not thoroughly described from the surface physics point of view. In the current research specimens of the “silicon wire - nerve fiber" interface were made. Experiments were carried out in vivo. The interface morphology and mechanisms of adhesion were examined in more detail and a physical model of intermolecular interaction of silicon surface and nerve fiber was proposed.

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“…Silicon wires (see Figure 1) were grown by the technology developed by Sandulova et al [28]. This technology is based on a method of gas-phase reaction in a sealed tube at a temperature gradient.…”

Section: Growth Of Silicon Wiresmentioning

confidence: 99%

Interface Nerve Tissue-Silicon Nanowire for Regeneration of Injured Nerve and Creation of Bio-Electronic Device

Klimovskaya¹,

Yuri²,

Anatoliy³

et al. 2019

Neurons - Dendrites and Axons

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This overview presents the results of scientific and practical research into the development of the interface "neuron-electronic device" based on silicon nanowire. The work has been carried out for several years by a team of scientists specializing in various fields of science and technology: neuroscience, surface science, nanoelectronics, crystal growth, physics and chemistry of nanotechnology, and nanocomputing. The technology of formation of the interface "nerve fiber-silicon nanowire" was developed. The experiments were performed in vivo on Wistar rats. The developed technology was used in the manufacture of implants for the regeneration of the injured sciatic nerve. The results of the studies showed the effectiveness of using such implants not only for the regeneration of nerves with severe injuries but also for the creation of a bioelectronic interface for neurocomputers that can be used in vivo for a long time.

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ChemInform Abstract: GASTRANSPORTPROZESSE IM SYST. INSB‐J2

Abstract: Durch thermodynamische Analyse der im System InSb‐J, verlaufenden Reaktionen wird festgestellt, daß am Transport von InSb hauptsächlich die Disproportinonierungsreaktion Abeteiligt ist.

Cited by 4 publications

References 0 publications

Zinc Oxide Microtowers by Vapor Phase Homoepitaxial Regrowth

Zinc Oxide Microtowers by Vapor Phase Homoepitaxial Regrowth

Morphology of the Interface “Silicon Wire - Nerve Fiber"

Interface Nerve Tissue-Silicon Nanowire for Regeneration of Injured Nerve and Creation of Bio-Electronic Device

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