ChemInform Abstract: LOESLICHKEIT UND AUSSCHEIDUNG VON ELEKTRISCH AKTIVEM PHOSPHOR IN GERMANIUM

Fistul, V. I.; Yakovenko, A. G.; Gvelesiani, A. A.; Tsygankov, V. N.; Korchazhkina, R. L.

doi:10.1002/chin.197525025

Cited by 6 publications

(15 citation statements)

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“…Based on the collected kinetic annealing curves, Fistul et al have found that P in Ge_diamond exhibited retrograde solubility. The maximum concentration of P in Ge_diamond was 7 × 10 19 atom/cm 3 (or, ~ 0.16 at.% P) at 800°C, 27 rather than the previously reported 0.45 at.% at 600°C. 26 Nevertheless, the P solubility in Ge at 650°C was ~ 4.7 × 10 19 atom/cm 3 (or, ~ 0.11 at.% P), which is in good agreement with the experimental data (0.12 at.%) in Ref.…”

Section: A Brief Review Of Previous Work On Phase Equilibriacontrasting

confidence: 83%

“…The solid solubility of P in Ge_diamond has been determined by means of microhardness measurements 26 and Hall effect measurements. 27 Abrikosov et al 26 investigated the solubility of P in Ge_diamond at 500°C, 600°C, 700°C, 800°C, 850°C and 900°C. Samples that have been made of single-crystal Ge (impurity level under 10 −5 %) and P_red (99.95%P), were annealed at a given temperature for 320-1000 h to achieve the equilibrium.…”

Section: A Brief Review Of Previous Work On Phase Equilibriamentioning

confidence: 99%

“…28 Hall effect measurements were conducted on the P-doped CZ Ge single-crystal to study the solubility of P in Ge_diamond in the temperature range of 300-880°C. 27 Before characterizing the Hall carrier concentration, Fistul et al have pretreated samples by annealing at 800°C for 2 h and quenching in ethylene glycol (with the cooling rate of 200°C/s). Besides, the measurement error has been controlled to be under 5% by adopting proper shape of sample and high magnetic fields (16 kA/m).…”

Section: A Brief Review Of Previous Work On Phase Equilibriamentioning

confidence: 99%

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Calculation of Phase Diagrams and First-Principles Study of Germanium Impacts on Phosphorus Distribution in Czochralski Silicon

Dong

Tao

Paulasto‐Kröckel

2021

Journal of Elec Materi

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Phosphorus (P) is one of the most widely used donor dopants for fabricating a low-resistivity silicon (Si) substrate. However, its volatile nature and the relatively small equilibrium segregation coefficient in Si at the melting temperature of Si impede the efficient and effective growth of low-resistivity Czochralski (CZ) Si single crystal. The primary objective of this work is to theoretically perceive the influence of germanium co-doping on the heavily P-doped Si crystal by means of CALculation of PHase Diagrams (CALPHAD) approaches and density functional theory (DFT) calculations. Phase equilibria at the Si-rich corner of the Si-Ge-P system has been thermodynamically extrapolated based on robust thermodynamic descriptions of involved binary systems, where Si-P and Ge-P have been re-assessed in this work. Phase diagram calculation results indicate that at a given P concentration (e.g. 0.33 at.% P) Ge co-doping lowers the solidification temperature of the Si(Ge, P) alloys, as well as the relevant equilibrium segregation coefficients of P in the doped Si. DFT calculations simulated the formation of (i) monovacancy in Si as well as (ii) solutions of Si(P) and Si(Ge) with one dopant substitutionally inserted in 64- and 216-atom Si cubic supercells. Binding energies were calculated and compared for Ge-Ge, Ge-P and P-P bonds positioning at the first nearest-neighbors (1NN) to the third nearest-neighbors (3NN). P-P bonds have the largest bonding energy from 1NN to 3NN configurations. The climbing image nudged elastic band method (CL-NEB) was utilized to calculate the energy barriers of P 1NN jump in the 64-atom Si cubic supercell with/without a neighboring Ge atom. With Ge present, a higher energy barrier for P 1NN jump was obtained than that without involving Ge. This indicates that Ge can impede the P diffusion in Si matrix.

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Section: A Brief Review Of Previous Work On Phase Equilibriacontrasting

confidence: 83%

Section: A Brief Review Of Previous Work On Phase Equilibriamentioning

confidence: 99%

Section: A Brief Review Of Previous Work On Phase Equilibriamentioning

confidence: 99%

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Calculation of Phase Diagrams and First-Principles Study of Germanium Impacts on Phosphorus Distribution in Czochralski Silicon

Dong

Tao

Paulasto‐Kröckel

2021

Journal of Elec Materi

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“…13,14 The limited data on the electrical activation for the temperature range considered are, however, a source of error for the calculated diffusivity. We have verified with simulation that this error remains small provided the activation level remains close to the one reported in the literature.…”

Section: B Diffusion Activation and Simulationmentioning

confidence: 99%

“…We have verified with simulation that this error remains small provided the activation level remains close to the one reported in the literature. 13,14 The general expression of the diffusion coefficient in extrinsic conditions can be described by the following equation: …”

Section: B Diffusion Activation and Simulationmentioning

confidence: 99%

Modeling and experiments on diffusion and activation of phosphorus in germanium

Tsouroutas

Tsoukalas

Zergioti

et al. 2009

Journal of Applied Physics

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We report on phosphorus diffusion and activation related phenomena in germanium. We have used both conventional thermal processing and laser annealing by pulsed nanosecond Nd:YAG laser. Chemical profiles were obtained by secondary-ion-mass spectroscopy, sheet resistance was estimated by the van der Pauw method, and structural defects were monitored by transmission electron microscopy. Our study covers the temperature range from 440 to 750 °C, and we were able to efficiently simulate the dopant profiles within that temperature range, taking into account a quadratic dependence of the P diffusion coefficient on the free electron concentration. To achieve that we have taken into account dopant activation dependence on temperature as well as dopant pile-up near the surface and dopant loss owing to outdiffusion during the annealing. A combined laser thermal treatment above the melting threshold prior to conventional annealing allowed the elimination of the implantation damage, so we could perceive the influence of defects on both transient dopant diffusion and outdiffusion.

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Monolayer doping of germanium by phosphorus-containing molecules

et al. 2018

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The DPP (diethyl 1-propylphosphonate) and ODPA (octadecylphosphonic acid) molecules are studied as precursors for the monolayer doping (MLD) of germanium. Their adsorption behaviour is investigated, revealing different physicochemical interactions between the phosphorus-containing molecules and the Ge surfaces. It is discovered that DPP adsorption occurs after the oxidation of Ge surface, while the ODPA undergoes chemisorption on -H terminated surfaces. Quantitative phosphorus analysis demonstrates that in the first case more than one monolayer is formed (from 2 to 4), while in the second a single monolayer is formed. Moreover, the analysis of phosphorus diffusion from the surface layers into the Ge matrix reveals that conventional thermal annealing processes are not suitable for Ge injection due to a higher activation energy of the process in comparison with silicon. On the contrary, pulsed laser melting is effective in forming a doped layer, owing to the precursor's decomposition under UV light.

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ChemInform Abstract: LOESLICHKEIT UND AUSSCHEIDUNG VON ELEKTRISCH AKTIVEM PHOSPHOR IN GERMANIUM

Cited by 6 publications

References 0 publications

Calculation of Phase Diagrams and First-Principles Study of Germanium Impacts on Phosphorus Distribution in Czochralski Silicon

Calculation of Phase Diagrams and First-Principles Study of Germanium Impacts on Phosphorus Distribution in Czochralski Silicon

Modeling and experiments on diffusion and activation of phosphorus in germanium

Monolayer doping of germanium by phosphorus-containing molecules

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