ChemInform Abstract: Microwave Ferrites, Part 1: Fundamental Properties

ZnO thin films by spray pyrolysis and its doping with Sb

“…By hot-probe technique, the doped films are found to be n-type. It was reported [1] that ZnO is naturally p-type semiconductor because of Zn interstitials or O vacancies. In the present case, the as-prepared ZnO films are nearly intrinsic.…”

“…In the present case, the as-prepared ZnO films are nearly intrinsic. Doping of ZnO thin films with metals having higher valencies such as Al, Ga, In created shallow zinc substitutional defects [1][2][3][4] to form highly conducting films after doping. Hence, in the case of ZnO:Sb, the reduced resistivity can be attributed for the presence of substitutional defects of Sbzp.…”

“…Zinc oxide (ZnO) has been an extensively studied wide band gap semiconducting material [1]. ZnO in its bulk/thin film and nanostructure form have potential applications in LEDs, solar cells, flat panel displays and laser emission [1].…”

“…Zinc oxide (ZnO) has been an extensively studied wide band gap semiconducting material [1]. ZnO in its bulk/thin film and nanostructure form have potential applications in LEDs, solar cells, flat panel displays and laser emission [1]. There are several reports, which describe the substantial changes in their electrical and optical properties due to doping.…”

“…There are several reports, which describe the substantial changes in their electrical and optical properties due to doping. N-type doping is relatively easy compared to p-type doping for this material [1]. Doping with group IM elements such as Al [2], Ga [3], and In [4] as substitutional elements of Zn by various methods were illustrated, and group VII elements such as Cl and I [5] were used as O substitutional elements to induce n-type conductivity.…”