ChemInform Abstract: Monofluoromethylation of Tetrahydroisoquinolines by Visible‐Light Induced Direct C(sp<sup>3</sup>)—H Bond Activation.

Li, Weipeng; Zhu, Yunhuang; Duan, Yingqian; Zhang, Muliang; Zhu, Chengjian

doi:10.1002/chin.201533201

Cited by 1 publication

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“…[21][22][23][24] TMDCs are layered 2D materials with a bandgap of up to ≈2 eV and charge carrier mobility values exceeding 150 cm 2 Vs À1 . [25,26] Corresponding field effect transistors (FETs) have shown excellent performance, with on-currents up to 1 mA mm À1 , on-off ratios above 10 8 , a subthreshold swing close to the physical limit of 60 mV dec À1 , and the possibility to realize nanometer-sized transistor channels. [27][28][29] TMDCs also have high mechanical resistance against strain, with Young's moduli up to 200 GPa.…”

Section: Introductionmentioning

confidence: 99%

Flexible Complementary Metal‐Oxide‐Semiconductor Inverter Based on 2D p‐type WSe₂and n‐type MoS₂

Piacentini,

Polyushkin,

Uzlu

et al. 2024

Physica Status Solidi (a)

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Transition metal dichalcogenides (TMDCs) are a promising class of two‐dimensional (2D) materials for flexible electronic applications due to their low integration temperature, good electronic properties, and excellent mechanical flexibility. Moreover, TMDCs offer the possibility of co‐integrating both n‐ and p‐type transistors on the same substrate, enabling the realization of complementary metal‐oxide‐semiconductor (CMOS) circuits. In this study, n‐type MoS2 field‐effect transistors (FETs), and p‐type WSe2‐FETs integrated on a flexible foil substrate fabricated by standard thin‐film technology are presented. These devices exhibit high stability in their electronic operation under strain and repeated bending cycles. A CMOS inverter based on these transistors is also successfully demonstrated, which shows excellent switching behaviour with high gain (up to 100), high noise margin (0.87 · VDD), and low average static power consumption (40 pW).

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Section: Introductionmentioning

confidence: 99%

Flexible Complementary Metal‐Oxide‐Semiconductor Inverter Based on 2D p‐type WSe₂and n‐type MoS₂

Piacentini,

Polyushkin,

Uzlu

et al. 2024

Physica Status Solidi (a)

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ChemInform Abstract: Monofluoromethylation of Tetrahydroisoquinolines by Visible‐Light Induced Direct C(sp³)—H Bond Activation.

Abstract: C‐1‐monofluoromethylated tetrahydroisoquinolines are obtained by visible‐light photoredox‐catalyzed reaction of tetrahydroisoquinolines with β‐fluorinated gem‐diols as CF‐source under mild reaction conditions.

Cited by 1 publication

References 1 publication

Flexible Complementary Metal‐Oxide‐Semiconductor Inverter Based on 2D p‐type WSe₂and n‐type MoS₂

Flexible Complementary Metal‐Oxide‐Semiconductor Inverter Based on 2D p‐type WSe₂and n‐type MoS₂

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ChemInform Abstract: Monofluoromethylation of Tetrahydroisoquinolines by Visible‐Light Induced Direct C(sp3)—H Bond Activation.

Abstract: C‐1‐monofluoromethylated tetrahydroisoquinolines are obtained by visible‐light photoredox‐catalyzed reaction of tetrahydroisoquinolines with β‐fluorinated gem‐diols as CF‐source under mild reaction conditions.

Cited by 1 publication

References 1 publication

Flexible Complementary Metal‐Oxide‐Semiconductor Inverter Based on 2D p‐type WSe2and n‐type MoS2

Flexible Complementary Metal‐Oxide‐Semiconductor Inverter Based on 2D p‐type WSe2and n‐type MoS2

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ChemInform Abstract: Monofluoromethylation of Tetrahydroisoquinolines by Visible‐Light Induced Direct C(sp³)—H Bond Activation.

Flexible Complementary Metal‐Oxide‐Semiconductor Inverter Based on 2D p‐type WSe₂and n‐type MoS₂

Flexible Complementary Metal‐Oxide‐Semiconductor Inverter Based on 2D p‐type WSe₂and n‐type MoS₂