The properties of neutral acceptor states in GaAs are re-examined in the frame of extended-basis sp d s* 3 5 tight-binding model. Spherical harmonics decomposition of microscopic local density of states (LDOS) allows for the direct analysis of the tight-binding results in terms of k • p approximation. Lifting of degeneracy by strain and electric field and their effect on LDOS are examined. The fine structure of magnetic impurity caused by exchange interaction of hole with impurity d-shell and its dependence on strain is studied. It is shown that exchange interaction makes the ground state more isotropic.