Chemisorption of hydrogen on the Si(100) surface: Monohydride and dihydride phases

Nonadiabatic dynamics in energetic negative fluorine ions scattering from a Si(100) surface

“…As seen in Figure 7, for the saturated hydrogen covered surface H-Si(100) (2 × 1), the work function is around 4.4-4.6 eV. 27 The well-localized dangling-bond surface states disappear 52,54 and the Si-Si dimer bonds located at 2.3 eV below the Fermi level are not affected by hydrogen adsorption. 54 In Ref.…”

Transition density of states (TDOS) of the Si(100)2 × 1 surface derived from the L2,3VV Auger lineshape compared with cluster calculations

“…Ciraci et al [59] stated that "neither of the UPS spectra gives any indication about the strong dimer peak at -13 eV, which was produced in several calculations [49,57], thus raising the question of the appropriateness of this technique for high binding energy levels situated at the first two atom layers". They observed this -20 eV transition for both crystalline and sputtered surfaces (100, 111, 110) [38], an observation which gives rise to speculation that second layer atoms are related to this peak.…”

“…We see also a significant contribution of the s-type Table 1 Peak positions of the valence band of Si (100) electrons from the filled dangling bond which agrees with ref. [59], where it is argued that the up-dangling bond is composed primarily of s + p, orbitals.…”

Adsorption of Oxygen and Hydrogen on Stepped Si(100) Surface

“…2, curve a and curve e can easily show that the small peak at about À7.8 eV (curve a) originates from Si p ±Si p dimer bond states as it was given in Ref. [45]. The surface states caused by the open bonds on bottom layer of the stepped Si(100) system are located just near the top of the valence band.…”