Transition density of states (TDOS) of the Si(100)2 × 1 surface derived from the L2,3VV Auger lineshape compared with cluster calculations

Sasse, A.G.B.M.; Wormeester, Herbert; Hoef, M.A. van der; Silfhout, A. van

doi:10.1016/0039-6028(89)90168-4

Cited by 10 publications

(9 citation statements)

References 63 publications

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“…This result provides supporting evidence for our idea that the optical spectra should be recorded in an energy region broader than was done in the present measurements in order to be compared satisfactorily with SCM measurements. From AES [5], UPS [24] and EELS [35] measurements, namely, surface states far below the Fermi energy were found to exist for the Si(001)2 × 1 surface. Their removal upon oxygen adsorption will certainly remain undetected within the optical photon energy region used (1.5-4.5 eV [10]).…”

Section: Im[e(v)] ~ ~-/Emdj(r) (6) Admentioning

confidence: 97%

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Kinetics of the adsorption of atomic oxygen (N2O) on the Si(001)2 × 1 surface as revealed by the change in the surface conductance

1992

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The adsorption behaviour of N20 on the Si(001)2 × ! surface at 300 K substrate temperature has been investigated by measuring in situ the surface conductance during the reaction process. For comparison we monitored in the same way the adsorption of 0 2 on the same surface which ultimately leads to the fiat band situation. The adsorption of atomic oxygen as released by decomposition of the N20 molecule, in contrast with molecular oxygen, was found to result in an increase of the band bending. The difference in behaviour of the change of the surface conductance between the two solid-gas reactions can be explained by considering that the adsorption of 0 2 will also remove deep-lying backbond states in addition to the dangling bond (DB) and dimer bond (DM) related surface states. It is well known that only the DB and DM surface states are affected by N20. The surface conductance measurements (SCM) presented in this paper complement our previous spectroscopic differential reflectivity measurements and Auger electron spectroscopic results for the system Si(001)2 × 1 + N20; we have found evidence that the second step of the proposed three-stage adsorption process of atomic oxygen can be divided into two substages. From our SCM data we could derive that the distance between the valence band edge and the Fermi energy of the clean Si(001)2 × 1 surface is 0.32 +_ 0.02 eV, which is in agreement with previous photoemission results.

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Section: Im[e(v)] ~ ~-/Emdj(r) (6) Admentioning

confidence: 97%

“…Surface states can be characterized by various methods like photoemission [1][2][3], inverse photoemission [4], Auger electron spectroscopy (AES) [5,6] and scanning tunneling microscopy (STM) [7]. Exposing an atomically clean solid surface to a gas will usually result in changes in the density and position of its surface states.…”

Section: Introductionmentioning

confidence: 99%

Kinetics of the adsorption of atomic oxygen (N2O) on the Si(001)2 × 1 surface as revealed by the change in the surface conductance

1992

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“…. , 5 ) [31], SiPOH18-N0, Siz2HI8-NO [26] and Siz7HP4 [27] clusters. For the back-bond atoms the ideal bulk geometry of silicon = 2.35 A, and tetrahedral angles) has been used, whereas the surface atoms are subject to an asymmetric 2 X 1 reconstruction [32,33] as used in [34].…”

Section: Cluster Calculationsmentioning

confidence: 94%

“…If one wants to perform an Auger lineshape analysis, a careful correction for the distortions is necessary which requires a careful study of its nature [15]. The distortions were removed [27] using essentially the same concept as described in [ 141, It was assumed in [14] that the lineshape deformation is proportional to the energy distribution V(E) of a reflected beam of electrons with the same energy as the dominant Auger transition. The measured Auger spectrum dN( E)/d E can be deconvoluted by this response function dV(E)/dE, thus yielding the true Auger lineshape A ( E ) :…”

Section: Data Processingmentioning

confidence: 99%

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Calculated and measured Auger lineshapes in clean Si(100)2×1, SiO_xand Si-NO

Sasse¹,

Wormeester²,

Hoef³

et al. 1989

J. Phys.: Condens. Matter

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Abstract. The measurements were performed on the clean 2 x 1 reconstructed Si(100) surface and this surface exposed to molecular oxygen (0,) or nitric oxide (NO) at room temperature. The data were corrected for electron loss and spectrometer distortions using our newly developed deconvolution method. This method which uses global approximation and spline functions can overcome several difficulties with respect to deconvolution and allows us to derive high-quality Auger lineshapes from the Si L2,,VV Auger electron spectra.Our experimentally obtained Auger lineshapes were compared with theoretical lineshapes utilising quantum chemical cluster calculations. We used this type of calculation for the interpretation of the Auger lineshape in the actual p-like and s-like partial local density of states for different types of silicon atom. The observed intensities of the major features are in reasonable agreement with our calculations.

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Adsorption of atomic and molecular oxygen on Si(0 0 1)2 × 1: Coverage dependence of the Auger O K V V lineshape

Wormeester¹,

Borg²,

Terpstra³

et al. 1991

Solid State Communications

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Transition density of states (TDOS) of the Si(100)2 × 1 surface derived from the L2,3VV Auger lineshape compared with cluster calculations

Cited by 10 publications

References 63 publications

Kinetics of the adsorption of atomic oxygen (N2O) on the Si(001)2 × 1 surface as revealed by the change in the surface conductance

Kinetics of the adsorption of atomic oxygen (N2O) on the Si(001)2 × 1 surface as revealed by the change in the surface conductance

Calculated and measured Auger lineshapes in clean Si(100)2×1, SiO_xand Si-NO

Adsorption of atomic and molecular oxygen on Si(0 0 1)2 × 1: Coverage dependence of the Auger O K V V lineshape

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Transition density of states (TDOS) of the Si(100)2 × 1 surface derived from the L2,3VV Auger lineshape compared with cluster calculations

Cited by 10 publications

References 63 publications

Kinetics of the adsorption of atomic oxygen (N2O) on the Si(001)2 × 1 surface as revealed by the change in the surface conductance

Kinetics of the adsorption of atomic oxygen (N2O) on the Si(001)2 × 1 surface as revealed by the change in the surface conductance

Calculated and measured Auger lineshapes in clean Si(100)2×1, SiOxand Si-NO

Adsorption of atomic and molecular oxygen on Si(0 0 1)2 × 1: Coverage dependence of the Auger O K V V lineshape

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Calculated and measured Auger lineshapes in clean Si(100)2×1, SiO_xand Si-NO