2006
DOI: 10.1016/j.susc.2006.01.086
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Chemistry and formation process of Ga(Al)As oxide during local anodic oxidation nanolithography

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Cited by 8 publications
(3 citation statements)
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“…One can deposited by Chemical Vapour Deposition CVD, Physical Vapour Deposition PVD or Physical Vapour Transport PVT methods. One can use Local Anodic Oxidation LAO by applying AFM equipment (Matsuzaki et al, 2000;Lazzarino et al, 2005;Lazzarino et al, 2006) to GaAs or GaN surface oxidizing and creating small regions covered by gallium oxide. As was told earlier in chapter 2, the best parameters for semiconductor devices has monoclinic -Ga 2 O 3 .…”
Section: Discussionmentioning
confidence: 99%
“…One can deposited by Chemical Vapour Deposition CVD, Physical Vapour Deposition PVD or Physical Vapour Transport PVT methods. One can use Local Anodic Oxidation LAO by applying AFM equipment (Matsuzaki et al, 2000;Lazzarino et al, 2005;Lazzarino et al, 2006) to GaAs or GaN surface oxidizing and creating small regions covered by gallium oxide. As was told earlier in chapter 2, the best parameters for semiconductor devices has monoclinic -Ga 2 O 3 .…”
Section: Discussionmentioning
confidence: 99%
“…The authors observed more or less strong surface reduction under irradiation with a micro-focused soft x-ray beam on SrTiO 2 , ZrO 2 , CeO 2 , and TiO 2 [68,69]. Experiments on oxide nanostructures obtained by local anodic oxidation (LAO) on GaAs and GaAs/AlAs/GaAs demonstrated that prolonged irradiation with soft x-rays (130 eV) can remove several layers of material, and eventually lead to the desorption of the whole LAO oxide [70][71][72][73][74].…”
Section: Oxide Surfaces and Interfacesmentioning
confidence: 99%
“…In AFM local anodic oxidation (LAO), the negatively biased tip induces simultaneous oxide growth on conductive surfaces. It is suggested that the oxidation mechanism and kinetics are closely related to electrical field, surface stress, water meniscus, and OH-diffusion, etc. Ultrathin oxide patterns, thickness ≤5.0 nm, have been fabricated on a silicon surface using AFM oxidation. , Besides being a powerful fabrication tool to grow oxide, AFM is also a good technique to measure adhesive forces and friction between surfaces in the nanometer scale. Adhesive forces come from two sources: contact interfacial forces and noncontact forces such as van der Waals or electrostatic forces.…”
Section: Introductionmentioning
confidence: 99%