Chemistry studies of SF6/CF4, SF6/O2 and CF4/O2 gas phase during hollow cathode reactive ion etching plasma

Tezani, Leandro L.; Pessoa, Rodrigo Sávio; Maciel, Homero Santiago; Filho, Gilberto Petraconi

doi:10.1016/j.vacuum.2014.03.003

Cited by 20 publications

(10 citation statements)

References 18 publications

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“…This experiment showed that~30% of the gas ratio had a maximum etch rate. Tezani et al reported on the chemistry of plasmas generated with SF 6 and CF 4 mixtures or mixed separately with O 2 [27]. Their experiment showed similar results.…”

Section: Resultsmentioning

confidence: 81%

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Effects on micropyramid and nanoneedle structures for superhydrophobicity on Si surface

Lee

Pyo²,

Cho

et al. 2016

Vacuum

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Section: Resultsmentioning

confidence: 81%

“…Many studies have reported on the RIE parameters for controlling the etching rate with the O 2 /SF 6 gas ratio [26,27]. For example, Knizikevi cius showed the influence of adding O 2 to SF 6 plasma on the etching rate of Si [26].…”

Section: Resultsmentioning

confidence: 99%

Effects on micropyramid and nanoneedle structures for superhydrophobicity on Si surface

Lee

Pyo²,

Cho

et al. 2016

Vacuum

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“…These parameters are typical for the negative ion sources. [1][2][3][4][5][6][7][8][9][10][11][12] Two cases are studied, namely, with and without the application of a homogeneous magnetic field. In the first case, magnetic field lines are parallel to the electrodes.…”

Section: Numerical Modelmentioning

confidence: 99%

Decay of a low-pressure oxygen magnetized and unmagnetized plasma

Levko

2014

Journal of Applied Physics

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Extraction of negative ions from electronegative plasmas is one of the key issues addressed during the study of these plasmas. One of the widely used methods is the turn off of the electron heating power. This results in the escape of electrons from the plasma and results in the formation of almost pure ion-ion plasma. In the latter case, the plasma sheath collapses, which enables the extraction of negative ions from the plasma. Another method is the application of a large magnetic field to the plasma. If the electrons become magnetized and trapped near the center of discharge chamber, the plasma sheaths near the walls collapse. This also enables the negative ion extraction from the plasma even during the power-on stage. The aim of the present paper is the comparison of these two methods.

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Section: Introductionmentioning

confidence: 99%

“…SF 6 plasma is commonly used as the main reactive agent to etch silicon due to its capacity to generate atomic fluorine (F), which has a high affinity for Si atoms to form SiF x ( x = ¼, 2, 4) volatile species [18,19]. The addition of small concentrations of O 2 in the SF 6 plasma leads to the generation of F due to the following oxidation reaction: O + SF x → SOF x −1 + F ( x ≤ 5) [18]. To our knowledge, the best aspect ratios (as high as 107) have been achieved using deep RIE (DRIE) [20], and values of 50 have been reported using Inductively Coupled Plasma (ICP-RIE) [21].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Silicon Nanobelts and Nanopillars by Soft Lithography for Hydrophobic and Hydrophilic Photonic Surfaces

Baquedano¹,

Martínez

Llorens³

et al. 2017

Nanomaterials

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Soft lithography allows for the simple and low-cost fabrication of nanopatterns with different shapes and sizes over large areas. However, the resolution and the aspect ratio of the nanostructures fabricated by soft lithography are limited by the depth and the physical properties of the stamp. In this work, silicon nanobelts and nanostructures were achieved by combining soft nanolithography patterning with optimized reactive ion etching (RIE) in silicon. Using polymethylmethacrylate (PMMA) nanopatterned layers with thicknesses ranging between 14 and 50 nm, we obtained silicon nanobelts in areas of square centimeters with aspect ratios up to ~1.6 and linewidths of 225 nm. The soft lithographic process was assisted by a thin film of SiOx (less than 15 nm) used as a hard mask and RIE. This simple patterning method was also used to fabricate 2D nanostructures (nanopillars) with aspect ratios of ~2.7 and diameters of ~200 nm. We demonstrate that large areas patterned with silicon nanobelts exhibit a high reflectivity peak in the ultraviolet C (UVC) spectral region (280 nm) where some aminoacids and peptides have a strong absorption. We also demonstrated how to tailor the aspect ratio and the wettability of these photonic surfaces (contact angles ranging from 8.1 to 96.2°) by changing the RIE power applied during the fabrication process.

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Chemistry studies of SF6/CF4, SF6/O2 and CF4/O2 gas phase during hollow cathode reactive ion etching plasma

Cited by 20 publications

References 18 publications

Effects on micropyramid and nanoneedle structures for superhydrophobicity on Si surface

Effects on micropyramid and nanoneedle structures for superhydrophobicity on Si surface

Decay of a low-pressure oxygen magnetized and unmagnetized plasma

Fabrication of Silicon Nanobelts and Nanopillars by Soft Lithography for Hydrophobic and Hydrophilic Photonic Surfaces

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