Low-pressure (10-3 Torr) chemical vapor deposition (LPCVD) employing a hot-walled
quartz reactor (300−360 °C) and silica/quartz or silicon substrates have been carried out
with X3W⋮*CtBu, where X = CH2CMe3, OtBu, and OBut-d
9 and *C = 12C and 13C. Thin
films formed on SiO2 or Si have been examined by XPS, RBS, XRD, SEM, and SIMS. The
volatile components evolved under the LPCVD conditions were trapped in an N2(l)-cooled
U-tube packed with glass beads and examined by GC−MS and 1H and 13C NMR spectroscopy.
Gray-black reflective films of amorphous tungsten carbide were formed (320−360°C), when
X = Me3CCH2, contaminated with 5−9 atom % oxygen. The 12C:13C ratio in the film was
ca. 7:1, and the volatile components were Me4C, Me3C13CH3 (54 mol % combined), Me2CCH2 (35 mol %), Me3C13C⋮CCMe3 (6 mol %), and Me3C13CHCHCMe3 (5 mol %) for the
LPCVD employing the 13C-labeled alkylidyne carbon. Films grown from (tBuO)3W⋮CCMe3
were WO2 (determined by XRD after annealing) contaminated with some carbon. The volatile
components were Me2CCH2 (45 mol %), tBuOH (38 mol %), and Me4C (5 mol %), together
with Me3CC⋮CCMe3, Me3CCHCHCMe3, and Me3CCH2CH2CMe3 (totaling ca. 10 mol %).
Reactions employing (tBu-d
9O)3W⋮CC(CH3)3 yielded perdeuterated isobutylene and tert-butyl alcohol together with (CH3)3CCD3, (CH3)3CCDCDC(CH3)3, and (CH3)3CCD2CD2C(CH3)3. Reactions employing (tBuO)3W⋮N were less clean because the precursor was
less volatile and it decomposes with sublimation. Nevertheless, the films obtained were
predominately WO2 contaminated with small amounts of C and N (<4%), and the volatile
components revealed the presence of NH3, isobutylene, and tBuOH. Collectively these results
show that the metal−ligand multiple bond is labile to hydrogen-transfer reactions, which
may lead to loss of the W⋮X atom. In the case of WC formation, the elimination of Me3CC⋮CCMe3 and Me3CCHCHCMe3 implicate surface chemistry involving C−C coupling of
alkylidyne and alkylidene ligands.