Chitosan-gated low-voltage transparent indium-free aluminum-doped zinc oxide thin-film transistors

Zheng, Zhouming; Jiang, Jie; Guo, Junjie; Sun, Jia; Yang, Junliang

doi:10.1016/j.orgel.2016.03.040

Cited by 37 publications

(18 citation statements)

References 42 publications

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“…Chitosan is a versatile biopolymer with multifunctional groups and possesses excellent film forming ability, − biocompatibility, and biodegradability. , As a result, it has been widely used in a range of applications, including biomedicine ,, and food packaging. , Among the various applications of chitosan, its use in bioelectronics has recently generated significant interest. − For instance, chitosan-based thin film transistors offer a route to flexible portable electronics. , Chitosan films have been integrated into lab-on-a-chip microelectromechanical systems that can perform advanced functions such as biorecognition, enzymatic conversion, and controlled drug release . Chitosan, in thin film form, has been used to fabricate photodiodes due to its low cost, easy processability, and compatibility with silicon .…”

Section: Introductionmentioning

confidence: 99%

“…11−14 For instance, chitosan-based thin film transistors offer a route to flexible portable electronics. 15,16 Chitosan films have been integrated into lab-on-a-chip microelectromechanical systems that can perform advanced functions such as biorecognition, enzymatic conversion, and controlled drug release. 17 Chitosan, in thin film form, has been used to fabricate photodiodes due to its low cost, easy processability, and compatibility with silicon.…”

Section: ■ Introductionmentioning

confidence: 99%

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Modulation of Optical Anisotropy in Chitosan Thin Films: Role of Swelling

2021

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Thin films of chitosan, a biopolymer, have attracted attention as plausible candidates for several niche applications. Such uses would be better served by a deeper understanding of the physical characteristics of the films and their relationship to polymer confinement. Therefore, we have used spectroscopic ellipsometry to investigate the optical properties of chitosan thin films prepared by spin coating. Thin films of chitosan exhibited uniaxial anisotropy with a higher in-plane refractive index. This suggested that the polymer chains were preferentially oriented in the plane of the thin film. The optical anisotropy, defined as the difference between the in-plane and the outof plane refractive indices, increased upon decreasing the (dry) film thickness and the consequent increase in the one-dimensional confinement of the polymer chains. Upon exposure to solvent vapor, the film thickness increased and was accompanied by an exponential decrease in the optical anisotropy with increasing exposure time. The characteristic time of the exponential decrease was of the order of a few minutes and weakly increased with the dry film thickness. Deswelling experiments suggested that the preparation-induced residual stresses contributed negligibly to the observed optical anisotropy, which, in addition to the initial (dry) film thickness, also depended on the weight fraction of the penetrant in the swollen film. The continued increase in the film thickness, however, indicated that the swelling progressed for several hours before reaching saturation. Assuming the existence of a compact, bound layer of chitosan that could not swell upon exposure to solvent vapor, we defined a time-dependent "effective swelling ratio". The swelling kinetics of chitosan thin films of different initial thicknesses could be described using this single function, which suggested that the swelling process in these films was qualitatively identical.

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Section: Introductionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

Modulation of Optical Anisotropy in Chitosan Thin Films: Role of Swelling

2021

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“…(1) Chitosan is the second most abundant polysaccharide on Earth and is extracted from the shells of crabs and shrimp; (2) Chitosan is an inexpensive, non-toxic, biocompatible polymer; (3) Chitosan is a low-cost solution that can achieve processability; (4) Chitosan has high-transparency and flexibility for its medium molecular weight; (5) Finally, chitosan has high-capacitance for protonic mobile ions 10 , 18 , 19 . In previous studies, numerous studies of chitosan electrolyte-based synaptic transistors, such as chitosan electrolyte-based metal–oxide–semiconductor channel-synaptic transistors on transparent glass substrate 19 , 20 , synaptic transistors on flexible freestanding chitosan-based membranes 10 , 21 , chitosan electrolyte-based SnO 2 nanowire channel synaptic transistors 22 , and two-dimensional MoS 2 channel-synaptic transistors 23 , have been extensively reported. This highly applicable chitosan electrolyte could offer not only artificial synaptic device applications but also versatile engineering platforms like skin-attachable, wearable, bio-sensor, and digestible smart electronics.…”

Section: Introductionmentioning

confidence: 99%

CMOS-compatible synaptic transistor gated by chitosan electrolyte-Ta2O5 hybrid electric double layer

Min

Cho

2020

Sci Rep

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This study proposes a hybrid electric double layer (EDL) with complementary metal-oxide semiconductor (CMOS) process compatibility by stacking a chitosan electrolyte and a Ta2O5 high-k dielectric thin film. Bio-inspired synaptic transistors with excellent electrical stability were fabricated using the proposed hybrid EDL for the gate dielectric layer. The Ta2O5 high-k dielectric layer with high chemical resistance, thermal stability, and mechanical strength enables CMOS-compatible patterning processes on biocompatible organic polymer chitosan electrolytes. This technique achieved ion-conduction from the chitosan electrolyte to the In-Ga-Zn oxide (IGZO) channel layer. The on/off current ratio, subthreshold voltage swing, and the field-effect mobility of the fabricated IGZO EDL transistors (EDLTs) exhibited excellent electrical properties of 1.80 × 107, 96 mV/dec, and 3.73 cm2/V·s, respectively. A resistor-loaded inverter was constructed by connecting an IGZO EDLT with a load resistor (400 MΩ) in series. This demonstrated good inverter action and responded to the square-wave input signals. Synaptic behaviours such as the hysteresis window and excitatory post-synaptic current (EPSC) variations were evaluated for different DC gate voltage sweep ranges and different AC gate spike stimuli, respectively. Therefore, the proposed organic–inorganic hybrid EDL is expected to be useful for implementing an extremely compact neural architecture system.

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“…An electrolyte-gated transistor is favorable for the electrical-double-layer (EDL) modulation, which enables the transistor to realize the memory behavior imitation . In recent years, the researches on electrolyte-gated synapse transistor based on ionic liquid or organic materials have made great progress. − However, these kinds of materials would result in poor interface contact and rough surfaces, leading to a large amount of defects that deteriorate the electrical performance and stability. Besides, these materials are not suitable for lithography and integration.…”

Section: Introductionmentioning

confidence: 99%

Artificial Synapse Emulated through Fully Aqueous Solution-Processed Low-Voltage In₂O₃ Thin-Film Transistor with Gd₂O₃ Solid Electrolyte

Zhou

Yang

et al. 2019

ACS Appl. Mater. Interfaces

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Brain-like neuromorphic computing system provides an alternative approach for the future computer for its characteristics of high-efficiency, power-efficient, self-learning, and parallel computing. Therefore, the imitation of synapse behavior based on microelectronics is particularly important. Recently, the synaptic transistors have received widespread attention. Among them, solid oxide-based synaptic transistors are more compatible with the largescale fabrication than the liquid and organic-based transistors. So the development of oxide synaptic transistor is required. Here, a novel aqueous solution-processed Gd 2 O 3 is suggested to be the solid electrolyte for synaptic transistors. The microstructure and the dielectric properties of Gd 2 O 3 film are investigated, which show the potential for the simulation of synaptic transmission. Then, the fully aqueous solution-processed In 2 O 3 /Gd 2 O 3 thin-film transistor (TFT) is fabricated. The device exhibits an acceptable electrical performance with a small threshold voltage of 1.24 V, and a small subthreshold swing of 0.12 V/decade. The artificial synapse behavior is stimulated and the short-term plasticity of In 2 O 3 /Gd 2 O 3 TFT is studied. The dependence of its excitatory postsynaptic current on presynaptic pulse magnitude, width, and frequency is verified. Besides, the synapse behavior of devices under continuous illumination stresses is investigated. The lights with different photon energy have different effects on the synaptic transmission, which is related to the ionization of oxygen vacancies. Our results demonstrate that fully aqueous solution-processed In 2 O 3 TFT with Gd 2 O 3 solid electrolyte is a candidate for the synaptic transistor.

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Chitosan-gated low-voltage transparent indium-free aluminum-doped zinc oxide thin-film transistors

Cited by 37 publications

References 42 publications

Modulation of Optical Anisotropy in Chitosan Thin Films: Role of Swelling

Modulation of Optical Anisotropy in Chitosan Thin Films: Role of Swelling

CMOS-compatible synaptic transistor gated by chitosan electrolyte-Ta2O5 hybrid electric double layer

Artificial Synapse Emulated through Fully Aqueous Solution-Processed Low-Voltage In₂O₃ Thin-Film Transistor with Gd₂O₃ Solid Electrolyte

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Chitosan-gated low-voltage transparent indium-free aluminum-doped zinc oxide thin-film transistors

Cited by 37 publications

References 42 publications

Modulation of Optical Anisotropy in Chitosan Thin Films: Role of Swelling

Modulation of Optical Anisotropy in Chitosan Thin Films: Role of Swelling

CMOS-compatible synaptic transistor gated by chitosan electrolyte-Ta2O5 hybrid electric double layer

Artificial Synapse Emulated through Fully Aqueous Solution-Processed Low-Voltage In2O3 Thin-Film Transistor with Gd2O3 Solid Electrolyte

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Product

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Artificial Synapse Emulated through Fully Aqueous Solution-Processed Low-Voltage In₂O₃ Thin-Film Transistor with Gd₂O₃ Solid Electrolyte