2020
DOI: 10.1002/aenm.202000615
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Chlorinated Fullerene Dimers for Interfacial Engineering Toward Stable Planar Perovskite Solar Cells with 22.3% Efficiency

Abstract: A major limit for planar perovskite solar cells is the trap‐mediated hysteresis and instability, due to the defective metal oxide interface with the perovskite layer. Passivation engineering with fullerenes has been identified as an effective approach to modify this interface. The rational design of fullerene molecules with exceptional electrical properties and versatile chemical moieties for targeted defect passivation is therefore highly demanded. In this work, novel fulleropyrrolidine (NMBF‐X, XH or Cl) mo… Show more

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Cited by 84 publications
(73 citation statements)
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References 37 publications
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“…Cl dimer interlayer to both SnO 2 and perovskite layer, as reported in our recent study[36]. With the bilayer ARC, the average J SC of PSCs is enhanced to 26.3±0.3 mA cm −2 , with the FF and V OC almost unchanged, resulting in an average PCE of 21.6±1.6% with a maximum of 23.9%.…”
supporting
confidence: 79%
“…Cl dimer interlayer to both SnO 2 and perovskite layer, as reported in our recent study[36]. With the bilayer ARC, the average J SC of PSCs is enhanced to 26.3±0.3 mA cm −2 , with the FF and V OC almost unchanged, resulting in an average PCE of 21.6±1.6% with a maximum of 23.9%.…”
supporting
confidence: 79%
“…This suggests that modifying the InF 3 promotes the growth of perovskite films. [11,32,42] Figure 3c,d show the cross-sectional SEM images of the PSCs based on unmodified SnO 2 and InF 3 À SnO 2 ETLs. The perovskite particles deposited on the unmodified SnO 2 ETL are disoriented, whereas the perovskite particles grown on the InF 3 À SnO 2 ETL grow perpendicular to the substrate surface and connect the ETL with the hole transport layer (HTL), which facilitates charge transfer.…”
Section: Resultsmentioning
confidence: 99%
“…As an n-type inorganic semiconductor material, SnO 2 has the advantages of appropriate energy levels, high transmittance, good charge transfer efficiency, and excellent stability under ultraviolet illumination. [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21] In recent years, it has been widely used as the preferred ETL material for PSCs. [22][23][24][25][26][27][28][29][30] Most importantly, the highperformance SnO 2 ETL can be prepared at low temperature, suggesting its immense potential as ETL in PSCs.…”
Section: Introductionmentioning
confidence: 99%
“…inevitable impact to the following perovskite growth, which will determine the performance and long-term stability of the PSCs. [20][21][22] Due to the low cost, good chemical stability, and high electron mobility, [23] SnO 2 is usually used as the electron transport layers (ETLs) in N─I─P-type PSCs. [23][24][25][26][27][28][29][30][31][32][33][34][35][36][37] However, the relatively large gap between the Fermi level and conduction band minimum (CBM) usually produces a weak built-in field potential in the device.…”
mentioning
confidence: 99%
“…Moreover, the hydroxyl on surface of SnO 2 film usually generates trap states near the valence band, [38] which will cause nonradiative recombination at the SnO 2 /perovskite interface and thus produce a low open-circuit voltage (V OC ), FF, and severe hysteresis. [4,20,22,[38][39][40][41][42][43][44][45] Herein, the mixture of amino trimethylene phosphonic acid (ATMP) and KOH are (ATMP-K) doped in SnO 2 to overcome the aforementioned problems. First, we confirm through density functional theory (DFT) calculations that ATMP can passivate the surface of SnO 2 by replacing the surface hydroxyls and strong binding to the surface Sn atoms.…”
mentioning
confidence: 99%