Chlorine‐Based High Density Plasma Etching of α-Ga2O3 Epitaxy Layer

Um, Ji Hun; Choi, Byoung Su; Jeong, Dae Hwi; Choi, Hyun-Ung; Hwang, Sun-Kyung; Jeon, Dae-Woo; Kim, Jin Kon; Cho, Hyun

doi:10.1007/s13391-020-00267-4

Cited by 4 publications

(1 citation statement)

References 21 publications

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“…Figure c shows that the largest breakdown voltages of samples E and F were 679 and 532 V, respectively, implying that sample E had a higher breakdown voltage due to the lower density of TDs, which can act as leakage current paths in the α-Ga 2 O 3 films. The breakdown voltages show relatively higher values than other α-Ga 2 O 3 -based diode results, benefiting from the high crystallinity of the α-Ga 2 O 3 templates. ,, It is expected that the performance of the diodes that are based on α-Ga 2 O 3 films on MESS will be boosted through the optimizing fabrication process such as doping , and etching …”

Section: Results and Discussionmentioning

confidence: 98%

α-Gallium Oxide Films on Microcavity-Embedded Sapphire Substrates Grown by Mist Chemical Vapor Deposition for High-Breakdown Voltage Schottky Diodes

Yang

Kim

et al. 2022

ACS Appl. Mater. Interfaces

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α-Gallium oxide, with its large band gap energy, is a promising material for utilization in power devices. Sapphire, which has the same crystal structure as α-Ga 2 O 3 , has been used as a substrate for α-Ga 2 O 3 epitaxial growth. However, lattice and thermal expansion coefficient mismatches generate a high density of threading dislocations (TDs) and cracks in films. Here, we demonstrated the growth of α-Ga 2 O 3 films with reduced TD density and residual stress on microcavity-embedded sapphire substrates (MESS). We fabricated the two types of substrates with microcavities: diameters of 1.5 and 2.2 μm, respectively. We confirmed that round conical-shaped cavities with smaller diameters are beneficial for the lateral overgrowth of α-Ga 2 O 3 crystals with lower TD densities by mist chemical vapor deposition. We could obtain crack-free high-crystallinity α-Ga 2 O 3 films on MESS, while the direct growth on a bare sapphire substrate resulted in an α-Ga 2 O 3 film with a number of cracks. TD densities of α-Ga 2 O 3 films on MESS with 1.5 and 2.2 μm cavities were measured to be 1.77 and 6.47 × 10 8 cm −2 , respectively. Furthermore, cavities in MESS were certified to mitigate the residual stress via the redshifted Raman peaks of α-Ga 2 O 3 films. Finally, we fabricated Schottky diodes based on α-Ga 2 O 3 films grown on MESS with 1.5 and 2.2 μm cavities, which exhibited high breakdown voltages of 679 and 532 V, respectively. This research paves the way to fabricating Schottky diodes with high breakdown voltages based on high-quality α-Ga 2 O 3 films.

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