Chlorine Concentration Profiles in  O 2 / HCl and  H 2 O  / HCl Thermal Silicon Oxides Using SIMS Measurements

Deal, B. E.; Hurrle, A.; Schulz, M.

doi:10.1149/1.2131356

Cited by 39 publications

(14 citation statements)

References 8 publications

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“…As in most materials, the etch rate of LPCVD-SiaN4 layers is enhanced significantly upon ion bombardment (1)(2)(3). This enhancement was first observed with monocrystalline silicon by Gibbons et al (4) and with amorphous SiO2 by Monfret and Bernard (5). Since then, numerous studies have dealt with this subject.…”

Section: Department Of Technological Physics University Of Utrecht mentioning

confidence: 54%

“…C and Con are the concentrations of bonded =-Si-C1 and ~Si-OH, respectively, kl and ks are the rate constants for the forward and reverse reaction. According to the steady-state oxidation model of Deal and Grove (24), when the oxide thickness is Xo, the concentration profiles of diffusing mobile species in the oxide are given by Cox(X) = Cox(0)(1 -x/(Xo + 0.5A)) [4] CHcl(X) = CHcl(0)(1 --X/(Xo + 0.5A')) [5] Cw(X) = Cw(0)(1 -x/(Xo + 0.5A")) [6] where Co~ is the 02 concentration. Co~(0), CHcI(0), Cw(0) are the concentrations of mobile molecular species at the outer interface (x = 0).…”

Section: Discussionmentioning

confidence: 99%

“…In this process C1 is incorporated into the SIO2, and is found to be segregated primarily near the Si/SiO2 interface (2)(3)(4). Recent C1 concentration vs. depth profiles determined by secondary ion mass spectrometry (SIMS) show a significant amount of C1 distributed in the oxide with increasing concentration toward the Si/SiO2 interface (5)(6)(7)(8)(9).…”

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confidence: 99%

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The Distribution of Cl Impurities in SiO2 Films Produced by Thermal Oxidation of Si in Cl‐Containing Ambients

Sheu¹,

Butler²,

Feigl³

et al. 1986

J. Electrochem. Soc.

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C1 was introduced into SiO2 films by thermally oxidizing (100) Si in either OJHC1 or O2/C12 gas mixtures at llO0~ C1 concentration vs. depth profiles in these oxide films were determined by SIMS (secondary ion mass spectrometry). Analysis of the C1 distributions shows that, after incorporation into the SiO2 network at the interface, in the bulk of the growing oxide the bonded C1 is removed from the network. This process is analyzed quantitatively as a chemical reaction in which H20 reacts to replace C1 with OH. The kinetics of this replacement reaction and of the oxide film growth determine the C1 concentration vs. depth profiles in the grown films. The replacement reaction kinetics are faster when H20 is present than when only O2 is present. This accounts for the significantly different CI profiles in HCI oxides and Cl2 oxides. These observations are consistent with previous studies of the redistribution of implanted CI in oxide films during a second oxidation step.Oxidation of Si in chlorine-containing ambients is a widely used process in preparing gate oxide films for Si devices (1). In this process C1 is incorporated into the SIO2, and is found to be segregated primarily near the Si/SiO2 interface (2-4). Recent C1 concentration vs. depth profiles determined by secondary ion mass spectrometry (SIMS) show a significant amount of C1 distributed in the oxide with increasing concentration toward the Si/SiO2 interface (5-9). One interpretation of these profiles was that the measured C1 was determined by the high temperature distribution of a mobile, diffusing C1 species (7). The authors suggested that the C1 transport was by a "field-aided" diffusion process, against the concentration gradient. However, the origin of such a field was not established. In contrast, the C1 profile was suggested to be determined by a reaction-controlled process (9, 10). This difference has not been resolved. The question will be addressed in this paper.In a previous paper, we presented a semiquantitative analysis of C1 concentration profiles measured by SIMS (11). The profiles were obtained in the course of high temperature (900~ reoxidation of thermal oxide films implanted with C1; the analysis indicated that redistribution of the implanted C1 during the reoxidation step can be controlled by either reaction or diffusion. Which process dominates depends on the concentration of mobile molecular species (H~O or O2) capable of displacing chlorine species bonded into the SiO2 network (=-Si-C1) and on the relative magnitude of forward and reverse reaction rates in the displacement reaction. In fact, the redistribution process is slow and reaction limited in dry reoxidizing ambients (of order 1 ppm H20). It is fast and possibly diffusion limited in wet ambients (more than 1% H20).Similar processes should determine the distribution of chlorine within oxide films fabricated by thermal oxidation of silicon in ambients containing HC1. Because of the gas-phase reaction of HC1 and O2, the molecular species HC1, C12, 02, and H20 will be present in ...

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Section: Department Of Technological Physics University Of Utrecht mentioning

confidence: 54%

Section: Discussionmentioning

confidence: 99%

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The Distribution of Cl Impurities in SiO2 Films Produced by Thermal Oxidation of Si in Cl‐Containing Ambients

Sheu¹,

Butler²,

Feigl³

et al. 1986

J. Electrochem. Soc.

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“…Further models of dopant distribution should account for this segregation, and include its dependence on processing parameters such as oxidation time, temperature, and bulk doping level.Similarly large amounts of chlorine, an additive in the oxidation ambient, are found at the Si-SiO 2 interface (seeFig. 22).Past studies of chlorine distributions in SiO 2 grown in 0 2 /HCl mixtures[26][27][28][29] showed high levels of chlorine residing in the oxide near the interface with much lower levels of chlorine in the bulk oxide. These results have been compiled largely from SIMS and RBS data, and show the FWHM of the a chlorine pile-up to be typically 150-200 A.…”

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confidence: 82%

Computer Aided Design of Integrated Circuit Fabrication Processes for VLSI Devices

Plummer¹,

Dutton²,

Gibbons³

et al. 1981

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“…Both and ( ) may be well represented at the singly activated processes [24] (12) and (13) where m /h, eV, m/h, and eV. Details of the thermal oxidation process can be found in [23].…”

Section: Silicon Oxidation Growing Modelmentioning

confidence: 99%

Application of neural fuzzy network to pyrometer correction and temperature control in rapid thermal processing

Lai

Lin

1999

IEEE Trans. Fuzzy Syst.

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Chlorine Concentration Profiles in O 2 / HCl and H 2 O / HCl Thermal Silicon Oxides Using SIMS Measurements

Cited by 39 publications

References 8 publications

The Distribution of Cl Impurities in SiO2 Films Produced by Thermal Oxidation of Si in Cl‐Containing Ambients

The Distribution of Cl Impurities in SiO2 Films Produced by Thermal Oxidation of Si in Cl‐Containing Ambients

Computer Aided Design of Integrated Circuit Fabrication Processes for VLSI Devices

Application of neural fuzzy network to pyrometer correction and temperature control in rapid thermal processing

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