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Chlorine concentration profiles in thermal silicon oxides prepared in OJHC1 and H20/HC1 ambients at 900~176 have been determined using secondary ion mass spectrometry (SIMS). The oxides represent various processing conditions, including 0-10 v/o HC1 in the oxidizing ambient, 0.25-4.0 hr oxidation time, and 0.05-0.25 ~m oxide thickness. For all OJHC1 oxides, chlorine is found to be piled up in the oxide in a region less than 200A from the Si-SiO2 interface. The chlorine peak concentration increases with increasing HC1 concentrations, oxidation temperatures, and oxidation times. Highest concentrations are observed at ll00~where values as measured in this investigation range up to 2.4 X 1021 cm -a (3.5 a/o). No appreciable amount of chlorine is ~ound in oxides prepared in H20/HC1 ambients. These results are discussed in relationship to previous investigations involving chlorine profiles, oxidation kinetics, and passivation properties oK cnmrme oxides.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-06-14 to IP