Crystalline silicon thin-film solar cells—recent results at Fraunhofer ISE

The epitaxial lateral overgrowth of silicon by two-step liquid phase epitaxy

“…Among many other methods of silicon thin films deposition processes, liquid phase epitaxy (LPE) attracts scientists' attention as the advantageous crystal growth technique, owing to the simplicity of its technology and the reduced growth temperature (below melting point of silicon) [1][2][3][4][5][6][7]. The growth of silicon thin layers results in the reduced consumption of the material, which makes LPE a promising low-cost technique suitable for the layers fabrication in application to electronic devices, such as solar cells.…”

Crystalline silicon solar module technology: Towards the 1 € per watt‐peak goal

“…Also this technology needs a few more years of R&D to become ready for industrial use. Finally, Epi.C (Table VII) implements a wafer-equivalent based module [18][19][20] for which a sufficiently high throughput in Si film deposition and a high efficiency should be accomplished, so that it is classified as having a high technology risk profile, with a higher time-to-industry than the previous technology options.…”

Epitaxial Thin Film Crystalline Silicon Solar Cells on Low Cost Silicon Carriers

“…Using this reactor, epitaxial layers were grown at 1150 • C on highly doped multicrystalline Si substrates at a deposition rate of about 1.5 μm/min and a throughput of 1.2 m 2 /h. Using a relatively simple solar cell process, an efficiency of 12.5 % was reported [90].…”