Circuit Modeling and Performance Analysis of Multi-Walled Carbon Nanotube Interconnects

The electric current distribution in a multiwall carbon nanotube (MWCNT) was studied by in situ measuring the electric potential along an individual MWCNT in the ultra-high vacuum transmission electron microscope (TEM). The current induced voltage drop along each section of a side-bonded MWCNT was measured by a potentiometric probe in TEM. We have quantitatively derived that the current on the outermost shell depends on the applied current and the shell diameter. More proportion of the total electronic carriers hop into the inner shells when the applied current is increased. The larger a MWCNT’s diameter is, the easier the electronic carriers can hop into the inner shells. We observed that, for an 8 nm MWCNT with 10 μA current applied, 99% of the total current was distributed on the outer two shells.

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“…This is because that there are more atoms in a larger tube, and the hopping is made easier. 29 I c (µA) can be derived as…”

Section: -6mentioning

confidence: 99%

Electric current distribution of a multiwall carbon nanotube

Chen

Chang

2016

AIP Advances

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“…(1) as constant and evaluating the integral, an I-V expression without integral calculation for nano conductors is derived as shown in Eq. (4). In this equation, DOS represents the density of states value and the term shown as T r is the transmission of electrons.…”

Section: Presented I-v Expression For Ballistic Nano Conductorsmentioning

confidence: 99%

“…Several models for new generation nano conductors exist in the literature [3,4,5] since these models are obviously needed for their design and analysis. In all of these models, current-voltage (I-V ) variations of nano conductors are clearly the main characteristics that have to be modelled accurately [6,7].…”

Section: Introductionmentioning

confidence: 99%

Algebraic Current-voltage and Voltage Dependent Resistance Expressions for Ballistic Nano Conductors and Their Low Voltage Nonlinearity

Yamaçli

2013

Nano-Micro Lett.

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Abstract:In this study, an algebraic current-voltage (I-V ) equation suitable for the hand-calculation of ballistic nano conductors is derived from Landauer's formulation. A voltage and temperature dependent resistance expression is also obtained. It is shown that the presented algebraic I-V expression and the original Landauer's formula give the same characteristics as expected. Moreover, the I-V characteristics of ballistic nano conductors are investigated and it is concluded that there is an inescapable nonlinearity originating from the curvature of Fermi-Dirac distribution function in low voltage range. Finally, the total harmonic distortion (THD) of a sample ballistic nano conductor caused from its low voltage nonlinearity is computed via HSPICE simulations.

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“…where n H and n W are the tube numbers in the vertical and horizontal directions [4], respectively; "Inter [ ]" indicates that only the integer part is taken into account; D and ∆(= 0.34 nm [1,4]) denote the diameter of each metallic tube and the separation between two neighbouring tubes in the bundle, respectively. In Fig.…”

Section: Transfer Function and Absolute Stabilitymentioning

confidence: 99%

“…Significant research progresses have been achieved in modeling single-, double-, and multi-walled CNT (SWCNT, DWCNT and MWCNT) interconnects. These progresses mainly include: (a) the development of RF circuit models for single and bundle interconnects consisting of SWCNT, DWCNT and MWCNT [2][3][4][5]; (b) the extraction of their distributed parameters [6][7][8]; (c) the characterization of crosstalk effects [9,10], (d) the prediction of their performance parameters in comparison with copper interconnects used for advanced CMOS fabrication technologies [11][12][13], and (e) the study on their relative stability [14], power handling capability, and other reliability issues [15]. On the other hand, it must be emphasized that design and fabrication technologies of CNT-based interconnects are very important for their real application in the future 3-D ICs, and some significant progresses can be found in [15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Transfer Function and Compact Distributed RLC Models of Carbon Nanotube Bundle Interconnets and Their Applications

Cui¹,

Wang²

2010

PIER

Self Cite

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Abstract-According to the derived transfer function using different orders of approximation, stability and signal transmission analysis of a driven metallic single-walled carbon nanotube (SWCNT) bundle interconnect are performed. It is shown that as the length of SWCNT bundle interconnect increases, the poles will be closer to the imaginary axis, which causes the transmitted signal response tends to be more damping. Using the fourth-order approximation of the transfer function, the transmitted pulse waveform along the SWCNT bundle interconnect is captured accurately, with signal overshoot and time delay examined. Further, a complete physical model for the transient response of carbon nanotube bundle interconnect is derived, which can also accurately predict the transient response of carbon nanotube bundle interconnect including time delay and crosstalk.

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Circuit Modeling and Performance Analysis of Multi-Walled Carbon Nanotube Interconnects

Cited by 338 publications

References 31 publications

Electric current distribution of a multiwall carbon nanotube

Electric current distribution of a multiwall carbon nanotube

Algebraic Current-voltage and Voltage Dependent Resistance Expressions for Ballistic Nano Conductors and Their Low Voltage Nonlinearity

Transfer Function and Compact Distributed RLC Models of Carbon Nanotube Bundle Interconnets and Their Applications

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