CIS and CIGS thin films prepared by magnetron sputtering

Li, Miaomiao; Chang, Fanggao; Li, Chao; Xia, Cunjun; Wang, Tianxing; Wang, Jihao; Sun, Mengbo

doi:10.1016/j.proeng.2011.12.419

Cited by 12 publications

(3 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Carbon nanotubes (CNT), nanocomposites and nanocrystals with suitable valence band edges are also materials that can be used to overcome the contradicting effects [91][92][93]. Thermal evaporation, magnetron sputtering and chemical etching [94][95][96][97][98], electrostatic spray assisted vapor deposition [99], electrospinning, and annealing indium tin oxide (ITO) processes [100,101] are preparation methods that have influential roles in the electrical and optical parameters. Enhanced operational characteristics of the examined devices, such as the short circuit current, Isc, the open circuit voltage, Voc and the fill factor, FF, can relate surface/layer treatment with the photoconversion efficiency, n, via the output power derived, P, following equation:…”

Section: Impacts Of Materials Properties and Fabrication Processesmentioning

confidence: 99%

Investigation of the Photon to Charge Conversion and Its Implication on Photovoltaic Cell Efficient Operation

2021

View full text Add to dashboard Cite

Efficient photon to charge (PTC) transfer is considered to be the cornerstone of technological improvements in the photovoltaic (PV) industry, while it constitutes the most common process in nature. This study aims to investigate the parameters that impact efficient PV-cell photon to charge conversion in two ways: (a) providing a brief research analysis to extract the key features which affect the electrical and optical performance of PV cells’ operation, and (b) investigating the dependance of these characteristics on the photon to charge mechanisms. The former direction focuses on the latest advances regarding the impacts of the microenvironment climate conditions on the PV module and its operational performance, while the latter examines the fundamental determinants of the cell’s efficient operation. The electrical and optical parameters of the bulk PV cells are influenced by both the external microenvironment and the intrinsic photon to charge conversion principles. Light and energy harvesting issues need to be overcome, while nature-inspired interpretation and mimicking of photon to charge and excitation energy transfer are in an infant stage, furthering a better understanding of artificial photosynthesis. A future research orientation is proposed which focuses on scaling up development and making use of the before mentioned challenges.

show abstract

Section: Impacts Of Materials Properties and Fabrication Processesmentioning

confidence: 99%

Investigation of the Photon to Charge Conversion and Its Implication on Photovoltaic Cell Efficient Operation

2021

View full text Add to dashboard Cite

show abstract

“…In order to overcome these drawbacks, Li etc. synthesized CuInSe2 thin films by co-sputter CuIn target and Se target [21]. Using Cu, In, Se element targets it prepared well crystallized CuInSe2 absorption layer thin films [22].…”

Section: Sputteringmentioning

confidence: 99%

Progress in CIS Series Thin Films Solar Cells

Zhang

Shi

Liu

2014

AMR

View full text Add to dashboard Cite

Advances in the preparation and research of CuInSe2thin films solar cell are reviewed. The main attention is given to the effects of synthesis methods, including sputtering, spray pyrolysis, thermal evaporation, electrodeposition, dissolution-spin coating. And the structures, morphologies, compositions and photoelectrical performances of the CIS thin films synthesized by different methods are compared. The defects of different methods and research direction in the future were discussed.

show abstract

“…Typically the most common material used for the back contact is molybdenum (Mo) (especially for soda lime glass substrates) and forms a non-blocking contact with CIGS, also other materials like tungsten (W), tantalum (Ta), manganese (Mn), titanium (Ti), have been used as back contact (Ramanathan et al,1998;Benmir and Aida, 2013). Variety of deposition techniques used to fabricate CIGS/CdS solar cells such as three stag process method (Ramanathan et al, 1998), thermal evaporation (Benmir and Aida, 2013), vacuum co-evaporation (Singh and Patra, 2010;Gloeckler, 2005), sputtering/selenization, (Urbaniak et al, 2016;Kumari and Verma, 2014), co-sputtering method (Li et al, 2012), i PLD method (Park et al, 2014), chemical bath deposition with efficiencies exceeding 18% (Dong-Sheng et al, 2013;Dhas et al, 2017), electrodeposition (Zhao et al, 2016;Saji et al, 2011), Physical vapor deposition (PVD) (Cojocaru-Miredin et al, 2011) and spin-coating method (Motoyoshi et al, 2010).Cadmium Sulfide (CdS) thin film plays important n-type absorber material based on CIGS and CdTe thin films (Nakada and Mizutani, 2002;Ramasamy et al, 2017). The CdS is still mostly used as a buffer layer or window layer for CIGS cells and other many p-types absorbers layers like Cu 2 S, CdTe, InP because of CdS belongs to n-type semiconductor compounds with wide band gap (2.0-2.42) eV and this leads to fabricate cells with high-efficiency (Mollica, 2016;Mustafa et al, 2017).…”

Section: Introductionmentioning

confidence: 99%

Characterization of (CIGS)/(CdS) Hetrojunction for Solar Cell

Shallal¹,

Ahmed²

2019

J. Eng. Appl. Sci.

View full text Add to dashboard Cite

The CIGS/CdS p-n junction thin films were fabricated and deposited at room temperature with rate of deposition 5, and 6 nm secG 1 , on ITO glass substrates with 1mm thickness by thermal evaporation technique at high vacuum pressure 2×10G 5 mbar, with area of 1 cm 2 and Aluminum electrode as back contact. The thickness of absorber layer (CIGS) was 1 µm while the thickness of the window layer CdS film was 300 nm. The X-ray Diffraction results have shown that all thin films were polycrystalline with orientation of 112 and 211 for CIGS thin films and 111 for CdS films. The direct energy gaps for CIGS and CdS thin films were 1.85 and 2.4 eV, respectively. Atomic Force Microscopy measurement proves that both films CIGS and CdS films have nanostructures. The carrier concentration, Hall mobility and the conductivity of CIGS and CdS thin films were calculated by hall effect measurement showing that p = 3.56×10 10 cmG 3 and n = 1.76×10 14 cmG 3 , respectively. The J-V characteristics for CIGS/CdS solar cells were measured when illuminated with 1000 W mG 2 , the efficiency were calculated before and after annealing with temperature 100 200 and 300°C for one hour in vacuum oven. The results indicate that the efficiency decreases with increasing annealing temperature of CIGS\CdS solar cell.

show abstract

CIS and CIGS thin films prepared by magnetron sputtering

Cited by 12 publications

References 13 publications

Investigation of the Photon to Charge Conversion and Its Implication on Photovoltaic Cell Efficient Operation

Investigation of the Photon to Charge Conversion and Its Implication on Photovoltaic Cell Efficient Operation

Progress in CIS Series Thin Films Solar Cells

Characterization of (CIGS)/(CdS) Hetrojunction for Solar Cell

Contact Info

Product

Resources

About