Class-F power amplifiers with maximally flat waveforms

Raab, Frederick H.

doi:10.1109/22.644215

Cited by 418 publications

(195 citation statements)

References 12 publications

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“…Hence, the voltage waveform of a class-F amplifier is similar to a square wave and the inverse class-F amplifier has a half sinusoidal voltage waveform [1,2,3,4,5]. Unlike a class-F amplifier whose maximum voltage swing is less than two times the supply voltage value, the peak voltage of an inverse class-F amplifier can be larger than twice the supply voltage value at the expense of device stress relative to the devices breakdown voltage.…”

Section: Introductionmentioning

confidence: 97%

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Highly efficient 2.7-2.9GHz class-F and inverse class-F power amplifiers in GaN HEMT technology

Kizilbey

2013

IEICE Electron. Express

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Abstract:In this letter, novel class-F and inverse class-F power amplifier (PA) topologies were proposed, simulated, realized and measured for 2.7-2.9 GHz frequency band by using Gallium Nitride high electron mobility transistor (GaN HEMT). Realizations are made on Rogers TMM3 dielectric material which has 0.381 mm thickness and 3.27 dielectric constant. Proposed class-F and inverse class-F PAs have 10 W (40 dBm) output power with 76% and 82% power added efficiency (PAE), respectively. Both PAs have state-of-the-art PAE performance compared to the PAs in the literature. Furthermore, the measurement results show that; under the same operation conditions, the inverse class-F PA has greater PAE than the class-F PA.

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Section: Introductionmentioning

confidence: 97%

“…It is generally sufficient short circuit 2 nd order harmonic and open circuit 3 rd order harmonic [1]. Fig.…”

Section: Proposed Class-f Load Network Topologymentioning

confidence: 99%

Highly efficient 2.7-2.9GHz class-F and inverse class-F power amplifiers in GaN HEMT technology

Kizilbey

2013

IEICE Electron. Express

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“…The voltage is shaped by odd harmonics of the fundamental frequency such that the voltage appears as a square-wave. The current is 180 0 out of phase and shaped to appear as a half sine-wave (Raab, 1997).…”

Section: Class-f Amplifiermentioning

confidence: 99%

Power Amplifiers for Electronic Bio-Implants

Laskovski¹,

Yuce²

2011

Biomedical Engineering, Trends in Electronics, Communications and Software

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“…In recent years, highly efficient PAs are also required for wireless power transmission applications to achieve high-reliable operation. Many types of amplifiers have been reported to improve efficiency, such as class E [1], class F [2], class E/F [3] so far. Among these types of PAs, the class E structure requires an extra shunt capacitor at the output side of the transistor in order to cancel the dissipation power at the active element.…”

Section: Introductionmentioning

confidence: 99%

Design of class-E GaN HEMT power amplifier using elliptic low pass matching network with 86% efficiency

Kizilbey

2013

IEICE Electron. Express

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In this paper, a highly efficient prototype of Gallium Nitride high electron mobility transistor (GaN HEMT) power amplifier using elliptic low pass filter output network is proposed, fabricated and measured. A fifth-order elliptic low-pass filter network is designed and implemented for the output matching, which provides optimized fundamental and harmonic impedances. Simulation and experimental results show that a Class-E PA is realized from 2.7 to 2.9 GHz with 10-W (40 dBm) output power, 10 dB gain and a measured efficiency of 86%, which is the highest reported today for such a frequency band and output power.

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Class-F power amplifiers with maximally flat waveforms

Cited by 418 publications

References 12 publications

Highly efficient 2.7-2.9GHz class-F and inverse class-F power amplifiers in GaN HEMT technology

Highly efficient 2.7-2.9GHz class-F and inverse class-F power amplifiers in GaN HEMT technology

Power Amplifiers for Electronic Bio-Implants

Design of class-E GaN HEMT power amplifier using elliptic low pass matching network with 86% efficiency

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