2007
DOI: 10.1103/physrevb.76.144118
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Clathrate formation in the Ba-Pd-Ge system: Phase equilibria, crystal structure, and physical properties

Abstract: Phase relations at subsolidus temperatures as well as at T = 800°C, crystallographic data, electrical and thermal transport measurements, and heat capacity data are reported for several compositions within the clathrate type-I solid solution: Ba 8 Pd x Ge 46−x−y ᮀ y ͑ᮀ is a vacancy͒. The solid solution derives from binary clathrate Ba 8 Ge 43 ᮀ 3 with a solubility limit of 3.8 Pd atoms per formula unit at T = 800°C. Structural investigations throughout the homogeneity region confirm cubic primitive symmetry co… Show more

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Cited by 52 publications
(62 citation statements)
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“…Consequently, a reduced Debye temperature, associated with the higher Ge mass, naturally explains the experimental findings. Such a conclusion appears to be corroborated by measurements of the thermal conductivity of Ba 8 M x Ge 46−x−y  y (M = Pd, Pt, Zn, Cd), [2][3][4][5] where λ ph (T ) of e.g., the Cd-based materials exhibit distinct lower values than comparable Zn-based samples.…”
Section: Temperature Dependent Electronic and Thermalsupporting
confidence: 54%
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“…Consequently, a reduced Debye temperature, associated with the higher Ge mass, naturally explains the experimental findings. Such a conclusion appears to be corroborated by measurements of the thermal conductivity of Ba 8 M x Ge 46−x−y  y (M = Pd, Pt, Zn, Cd), [2][3][4][5] where λ ph (T ) of e.g., the Cd-based materials exhibit distinct lower values than comparable Zn-based samples.…”
Section: Temperature Dependent Electronic and Thermalsupporting
confidence: 54%
“…As a result both the metallic and the semiconducting features are accounted for. [2][3][4][5] The metallic behaviour derives from scattering of conduction electrons into unoccupied states in reciprocal space just above the Fermi energy. Once this region of the DOS becomes occupied, electrons have to be promoted across the gap, originating in a semiconducting behaviour.…”
Section: Temperature Dependent Electronic and Thermalmentioning
confidence: 99%
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“…A number of investigations have been performed to elucidate the fundamental mechanism of the low thermal conductivity in clathrates by either varying the guest atoms [7][8][9][10][11][12] or changing the environment of the guest atoms by substitution of host atoms. 9,11,[13][14][15][16][17][18][19][20][21][22][23][24] Herein, we report our investigations on the type I clathrates Ba 8 Cu 5 Si x Ge 41Àx (x = 6, 18, 41) with the aim of clarifying the structural details and their variation with x, by single-crystal x-ray diffraction.…”
Section: Introductionmentioning
confidence: 98%
“…In the simplest model, the electronic structure of clathrates can be understood in terms of the Zintl concept: Binary Ba 8 Ge 43 ( 3 with three framework defects can be formulated as ½Ba 2þ 8 ½Ge 0 43 ½( 4À 3 , yielding an excess of four electrons per formula unit. This simple concept was proven successful in previous substitution and doping studies carried out on binary Ba 8 Ge 43 ( 3 : [3][4][5][6][7][8][9] Substitution and doping turned out to be a fruitful and promising tool to arrange the charge carrier concentration of clathrates in an optimal manner to tailor the highest possible thermoelectric performance. 10 The aim of the present work is to study the transport properties of type I clathrates Ba 8 Ge 43 ( 3 where the charge carrier density is fine-tuned by substituting Ge by Cu, Zn, Pd, and Si.…”
Section: Introductionmentioning
confidence: 87%