Cleaning and passivation of the Si(100) surface by low temperature remote hydrogen plasma treatment for Si epitaxy

Evaluation of Surface Cleaning of Si(211) for Molecular-Beam Epitaxy Deposition of Infrared Detectors

“…The Si(211) surface is the current preferred alternative substrate for epitaxial growth of HgCdTe for thermal imaging and electronic systems in the USA. [1][2][3][4] Much effort has been devoted to understanding the nature of HF-treated Si(100) [5][6][7][8][9][10] and Si(111) [11][12][13][14][15] surfaces. These studies have shown that H is present on HF-treated Si as nearly a pure monohydride on Si(111) and as mixed monohydride and dihydride on Si(100).…”

Low thermal budget in situ removal of oxygen and carbon on silicon for silicon epitaxy in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor

“…However, the push toward smaller device dimensions have triggered a considerable number of studies to develop alternative approaches that can provide Si surfaces suitable for Si epitaxy at low temperatures. These include sputter cleaning 4 thermal desorption in ultrahigh vacuum environment, 5 hydrogen plasma clean, 6 reaction with reactive gases like Si 2 H 6 , 7 SiH 4 , 8 and reduction by a molecular beam of Ga, 9 Si, 10 Ge. 11 Among these, the method proposed by Meyerson and his co-workers at IBM probably represents the most controversial approach for it completely eliminates the need for any in situ cleaning to obtain an oxide-free Si surface prior to epitaxy.…”

A monohydride high-index silicon surface: Si(114):H-(2×1)

“…Hydrogen can be used to reduce surface contamination and interface states, 9,10 and can also serve as a surfactant 11 and as an electron-beam lithography mask for nanoelectronic structures. [12][13][14][15] However, to our knowledge Si͑001͒ is the only Si surface that can be easily monohydride terminated with gaseous hydrogen.…”