Cleaning Solutions for p-MSQ Low-k Device Applications

Waldfried, Carlo; Escorcia, Orlando; Han, Qing; Smith, Patricia B.

doi:10.1149/1.1621286

Cited by 28 publications

(17 citation statements)

References 2 publications

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“…16 Five thickness measurements at the center of the wafer were averaged before and after the HF exposure. 16 Five thickness measurements at the center of the wafer were averaged before and after the HF exposure.…”

Section: Methodsmentioning

confidence: 99%

Property modifications of nanoporous pSiCOH dielectrics to enhance resistance to plasma-induced damage

Ryan

Gates

Grill

et al. 2008

Journal of Applied Physics

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The resistance to plasma-induced damage of various nanoporous, ultra low-κ porous SiCOH films used as interconnect dielectric materials in integrated circuits was studied. These films are susceptible to damage by plasma processes used during nanofabrication. The dielectric constants and chemical compositions of four dielectric films were correlated with measured amounts of plasma damage. Films deposited with higher carbon content in the form of Si–CH3 and Si(CH3)2 bonding exhibited less plasma damage than similar films with lower carbon content.

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Section: Methodsmentioning

confidence: 99%

Property modifications of nanoporous pSiCOH dielectrics to enhance resistance to plasma-induced damage

Ryan

Gates

Grill

et al. 2008

Journal of Applied Physics

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“…1,2) Traditionally the remaining PR layer after plasma etch is removed before copper deposition using an oxidizing plasma process. With the introduction of new porous dielectric materials, this approach is not acceptable anymore since they are susceptible to physical and chemical damage upon plasma processing which may irreversibly affect the dielectric properties [3][4][5] during the PR removal process.…”

Section: Introductionmentioning

confidence: 99%

Alternative Photoresist Removal Process to Minimize Damage of Low-k Material Induced by Ash Plasma

Le¹,

Keldermans

Chiodarelli

et al. 2008

jjap

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Dry ashing of photoresist (PR) using oxygen-containing plasma applied subsequently to an etch plasma leads to degradation of porous low-k material. The surface region is substantially depleted in carbon. The low-k film becomes more hydrophilic after being subjected to plasma etch and especially ash process as evidenced by water absorption results. The amount of absorbed water into a 30% porosity film at moisture saturation is estimated to be about 15% of the film volume, which corresponds to 50% of the total pores in the low-k film. A wet, alternative means for PR removal based on dissolution of PR in organic solvents combined with physical forces is presented. Under certain conditions, megasonic cleaning resulted in complete removal of the PR layer without damaging of the dielectric lines. These results suggest that the PR crust is permeable to these solvents and that out-diffusion of dissolved bulk PR also occurred through the crust. Dissolution of bulk PR in organic solvents first makes the PR structure more fragile, then the physical energy helps to remove the remaining crust mechanically without dissolving it. Compared to plasma ashing, solvent strip shows no carbon depletion and no significant increase in k-value.

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“…In general, oxygencontaining plasmas are more prone to porous low-k damaging and the extent of the damage depends upon the gas ratio and experimental parameters. 2,[5][6][7] Likewise, the cleaning chemicals and conditions applied for PER removal must also be compatible with the materials exposed in the stack, in particular the porous dielectrics, bottom hard mask, and metal. Removal of the TiN HM during the PER removal represents an option and has an advantage of decreasing the aspect ratio of the stack, which in turn may improve the efficiency of the metal filling in trenches.…”

mentioning

confidence: 99%

Formation and Wet Removal of Organic and Titanium-Containing Residues on Patterned TiN/Porous Low-k Structure

Kesters

Holsteyns

2018

ECS J. Solid State Sci. Technol.

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The formation of the residues after patterning of a patterned metal hard mask/dielectric stack was characterized using surface-sensitive methods (attenuated total reflection-Fourier transform infrared spectroscopy and angle-resolved X-ray photoelectron spectroscopy) and scanning electron microscopy. The effect of a reducing plasma post-etch treatment (PET), aging, and moisture on the evolution of the residues was investigated. Both polymer-based (CFx) and metal-containing (TiFx) residues were identified on the exposed surface of the stack. Without the PET, the XPS data collected at different take-off angles suggested that the metal-containing residues were covered by a thin layer of polymer-based residues. The metal-containing residues were found to continue to evolve as a function of aging time if the layer of polymer-based residues was removed by the PET, making the metal hard mask in direct contact with cleanroom air. Exposing the MHM/dielectric stack to a 100% humidity environment did not induce further growing of the TiFx residues. Despite the PET only had limited removal of the TiFx-based residues, it was efficient in removing the polymer-based CFx residues, which in turn led to a better cleaning efficiency after the subsequent wet clean. The results in this study also confirmed that diluted HF dissolved TiFx-type residues and had no CFx removal capability. Although only two chemicals are shown as examples for post-etch residue removal, the type of test structure and methodology shown in this study can be applied for investigation and optimization of any other chemical mixture candidates for cleaning purpose.

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Cleaning Solutions for p-MSQ Low-k Device Applications

Cited by 28 publications

References 2 publications

Property modifications of nanoporous pSiCOH dielectrics to enhance resistance to plasma-induced damage

Property modifications of nanoporous pSiCOH dielectrics to enhance resistance to plasma-induced damage

Alternative Photoresist Removal Process to Minimize Damage of Low-k Material Induced by Ash Plasma

Formation and Wet Removal of Organic and Titanium-Containing Residues on Patterned TiN/Porous Low-k Structure

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