Clear energy level shift in ultranarrow InGaAs/InP quantum well wires fabricated by reverse mesa chemical etching

Abstract

We have fabricated ultranarrow InGaAs/InP buried quantum well wires by means of electron beam lithography and reverse mesa wet etching. Owing to the reverse mesa etching profile, the lateral dimension of the wires has been reduced to 10 nm. Furthermore, we investigated the optical characteristics of these wires by photoluminescence and observed, for the first time, clear dependence of luminescence wavelength upon the wire width even for wires down to 10 nm, which is well explained by the theoretical calculation. The blue-shifted shoulder structures were also observed and they were assigned theoretically to be the second quantized level.

Nonorthogonal theory of polarons and application to pyramidal quantum dots

“…Although experimentally verified in certain cases 14,15 , these predictions failed in many other tests. 16,17 A definite progress came with non-perturbative investigations of the deformation potential and Fröhlich interaction, revealing the existence of a strong coupling regime, which is out of reach of perturbative approaches and allows efficient carrier relaxation through acoustic and optical phonon dynamics respectively. [18][19][20][21] This led to the new concept of quantum dot polarons (QDPs), which are non-separable fundamental excitations determined by the carrier-phonon interaction.…”

Quantum-confined Stark effects of exciton states in V-shapedGaAs/AlxChang1, Xia2 1998Phys. Rev. B41070View full textAdd to dashboardCite

“…In this field, recent investigations focus on the Vshaped and T-shaped quantum wires. [4][5][6][7][8][9][10] These quantum wires share desirable optical properties ͑the enhancement of exciton binding energy and a small linewidth͒ for device applications.…”

GaInAsP/InP quantum-wire lasers

“…The first attempt to fabricate GaAs Q-wire structures was carried out in 1982 by combining the growth of a QW structure followed by conventional lithography and a burial of the growth layer [13]. Similar technologies have also been investigated, including EB direct lithography and wet chemical etching [14], and dry etching [15], [16] followed by embedding growth [17], [18] for GaInAsP/InP, AlGaAs/GaAs [19], GaInAs/GaAs [20], [21] and Si/Si 1−x Ge x [22] systems. Other similar techniques including electrochemical anodization [23] and impact lithography [24] have also been attempted.…”