2006
DOI: 10.1016/j.nima.2006.05.267
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Clear-performance of linear DEPFET devices

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Cited by 21 publications
(14 citation statements)
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“…[10] show that pixel designs similar to the one used in the setup cannot be cleared completely. Hence, additional reset noise has to be considered for the matrix.…”
Section: Total Noisementioning
confidence: 99%
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“…[10] show that pixel designs similar to the one used in the setup cannot be cleared completely. Hence, additional reset noise has to be considered for the matrix.…”
Section: Total Noisementioning
confidence: 99%
“…Hence, additional reset noise has to be considered for the matrix. However, complete clear has been demonstrated for other pixel designs options [10] which will be preferred in future setups. The total noise figure can further be improved by using DEPFET sensors with a higher internal gain g q .…”
Section: Total Noisementioning
confidence: 99%
“…The DEPFET matrix is read out by selecting one row at a time and reading current signals of the columns in parallel. Each module is equipped with three different ASIC types mounted on the detector substrate with a flip-chip technique [2]: the ''Drain Current Digitizers'' (DCDs), which digitize the drain currents from a row of pixels [3]; and the ''SWITCHERs'', which select and clear the pixels rowwise to send the currents to the DCDs [4,5]; and the ''Data Handling Processors'' (DHPs) are used to reduce the data rates of the DCDs by zero-suppression and readout triggered data only [6]. While the SWITCHERs are located along the side of the DEPFET sensor, DCDs and DHPs are located at the end of the sensor.…”
Section: Introductionmentioning
confidence: 99%
“…Another clear pulse follows to the selected row and the cell is sampled again for pedestal readout. It has been shown [9] that the clear process is complete, i.e. all electrons are emptied out of the internal gate, with not too large clear voltage differences (ΔV on/off ≈ 5-7 V) and a constant and fixed clear-gate voltage around 0 V. With complete clearing the statistical fluctuations in the number of electrons in the internal gate are absent as always the same (empty) level of signal charges in the internal gate is reached.…”
Section: Operation Of Depfet Matricesmentioning
confidence: 98%
“…all electrons are emptied out of the internal gate, with not too large clear voltage differences (ΔV on/off ≈ 5-7 V) and a constant and fixed clear-gate voltage around 0 V. With complete clearing the statistical fluctuations in the number of electrons in the internal gate are absent as always the same (empty) level of signal charges in the internal gate is reached. Complete clearing can be achieved by short clear pulses (∼10 ns) [9]. A photograph of the DEPFET-Matrix hybrid assembly is shown in Fig.…”
Section: Operation Of Depfet Matricesmentioning
confidence: 99%