Clinical Enzymology

Wilkinson, J. H.

doi:10.1177/014107687807100401

Cited by 5 publications

(5 citation statements)

References 25 publications

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“…[9]. Early attempts to observe Bragg reflection of plasmons in the 2DES were carried out on Silicon MOSFETs with a patterned top gate to periodically modulate the density [10][11][12]. These experiments were hampered by plasma decay over short distances.…”

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confidence: 99%

Tunable Plasmonic Crystals for Edge Magnetoplasmons of a Two-Dimensional Electron System

et al. 2008

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Plasmonic crystal effects analogous to photonic crystal phenomena such as zone folding and gap opening were observed for edge magnetoplasmons in a two-dimensional electron system with a periodically corrugated boundary at microwave frequencies. Magnetic field dependent photovoltage data provide unequivocal evidence for Bragg reflection. Band gaps up to fifth order were observed. These gaps were investigated as a function of the electron density, the magnetic field, and the periodicity to demonstrate the tunability of the dispersive properties of these plasmonic crystals.

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confidence: 99%

Tunable Plasmonic Crystals for Edge Magnetoplasmons of a Two-Dimensional Electron System

et al. 2008

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“…In a recent survey of clinical enzymology Wilkinson (1978) discusses the release of enzymes from cells. He concludes that intracellular energy content is important in the control of membrane permeability and instances loss of enzymes resulting from a variety of insults such as anoxia, deprivation of glucose, high potassium concentrations, high energy phosphates and metabolic inhibitors to both rat muscle and human erythrocytes.…”

Section: Discussionmentioning

confidence: 99%

Clinical and biochemical findings in ten patients with benign myalgic encephalomyelitis

Ramsay¹,

Rundle²

1979

Postgraduate Medical Journal

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“…Far infrared absorption in density modulated twodimensional electron systems has been studied theoretically in a series of papers, [3][4][5][6][7][8][9] …”

Section: Introductionmentioning

confidence: 99%

Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor

Popov

Polischuk

Teperik

et al. 2003

Journal of Applied Physics

115

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Graphene based field effect transistor for the detection of ammonia J. Appl. Phys. 112, 064304 (2012) Unipolar behavior of asymmetrically doped strained Si0.5Ge0.5 tunneling field-effect transistors Appl. Phys. Lett. 101, 123501 (2012) Efficient physical-thermal model for thermal effects in AlGaN/GaN high electron mobility transistors Appl. Phys. Lett. 101, 122101 (2012) Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donorThe terahertz absorption spectrum of plasmon modes in a grid-gated double-quantum-well ͑DQW͒ field-effect transistor structure is analyzed theoretically and numerically using a first principles electromagnetic approach and is shown to faithfully reproduce important physical features of recent experimental observations. We find that the essential character of the response-multiple resonances corresponding to spatial harmonics of standing plasmons under the metal grating-is caused by the static spatial modulation of electron density in the channel. Higher order plasmon modes become more optically active as the depth of the electron density modulation in the DQW tends towards unity. The maximum absorbance, at plasma resonance, is shown to be 1/2. Furthermore, the strongest absorption also occurs when the standing plasmon resonance coincides with the fundamental dipole mode of the ungated portion of the channel.

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Clinical Enzymology

Cited by 5 publications

References 25 publications

Tunable Plasmonic Crystals for Edge Magnetoplasmons of a Two-Dimensional Electron System

Tunable Plasmonic Crystals for Edge Magnetoplasmons of a Two-Dimensional Electron System

Clinical and biochemical findings in ten patients with benign myalgic encephalomyelitis

Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor

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