Close‐spaced crystal growth and characterization of BP crystals

Schmitt, Jason; Edgar, L. J. H.; Liu, L.; Nagarajan, R.; Szyszko, T.; Podsiadło, S.; Wojciech, G.

doi:10.1002/pssc.200460624

Cited by 7 publications

(5 citation statements)

References 12 publications

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“…Peaks at 776 cm À1 and 964 cm À1 corresponded to TO and LO phonon modes of 4H-SiC(0001) substrate. These phonon mode values are in agreement with values reported in the literature [3,12,13]. BP peak position shifted to the lower value when the temperature increased from 1000 C to 1200 C. Also, resolution of the weak TO band that appeared at approximately 794 cm À1 improved when the temperature increased.…”

Section: Raman Spectroscopy Analysissupporting

confidence: 93%

Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide

Padavala

Frye

Ding

et al. 2015

Solid State Sciences

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a b s t r a c tEpitaxial growth of boron phosphide (BP) films on 4H-and 6H-SiC(0001) substrates with on-and off-axis orientations was investigated in this study. The films were prepared by chemical vapor deposition using phosphine and diborane as reactants over a temperature range of 1000 o Ce1200 C. The effects of growth parameters such as temperature, reactant flow rates, substrate type, and crystallographic orientation on BP film properties were studied in detail. The epitaxial relationship between BP film and 4H-and 6H-SiC substrate was ð111ÞBP < 112 > BP jj ð0001ÞSiC < 1100 > SiC. Film quality, determined by preferred crystalline orientation and grain size, improved with temperature and PH 3 /B 2 H 6 flow ratio, as indicated by scanning electron microscopy, x-ray diffraction, atomic force microscopy and Raman spectroscopy. In addition, smoother films were obtained when the diborane flow rate was reduced. Rotational twinning in BP films was absent on 4H-SiC(0001) tilted 4 towards ½1100, but was confirmed on both 4H-SiC(0001) tilted 4 towards ½1210, and on-axis 6H-SiC(0001) substrates by synchrotron white beam x-ray topography technique.

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Section: Raman Spectroscopy Analysissupporting

confidence: 93%

Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide

Padavala

Frye

Ding

et al. 2015

Solid State Sciences

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“…Raman wavenumbers measured for BP were in good agreement with values reported in the literature. 14,22,26,27 The intensity of LO mode is typically stronger than the TO mode, so peak widths were calculated only for the LO mode. FWHM values consistently decreased with increase in deposition temperature, and peak width (FWHM = 6.1 cm −1 ) measured at 1200 °C on this substrate was lower than values previously reported in the literature for BP epitaxial films.…”

Section: Resultsmentioning

confidence: 99%

Epitaxy of Boron Phosphide on Aluminum Nitride(0001)/Sapphire Substrate

Padavala

Frye

Wang

et al. 2015

Crystal Growth & Design

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The boron phosphide (BP) semiconductor has many remarkable features, including high thermal neutron capture cross section of the 10 B isotope, making it attractive for neutron detection applications. Effective and efficient neutron detection require BP to also have high crystal quality with optimum electrical properties. Here, we present the heteroepitaxial growth of high quality BP films on a superior aluminum nitride(0001)/sapphire substrate by chemical vapor deposition. The effect of process variables on crystalline and morphological properties of BP was examined in detail. BP deposited at high temperatures and high reactant flow rate ratios produced films with increased grain size and improved crystalline orientation. Narrower full width at half-maximum values of BP Raman peaks (6.1 cm −1 ) and ω rocking curves (352 arcsec) compared to values in the literature confirm the high crystalline quality of produced films. The films were n-type with the highest electron mobility of 37.8 cm 2 /V·s and lowest carrier concentration of 3.15 × 10 18 cm −3 . Rotational twinning in BP due to degenerate epitaxy caused by 3-fold BP(111) on 6-fold AlN(0001) was confirmed by synchrotron white beam X-ray topography. This preliminary study showed that AlN is an excellent substrate for growing high quality BP epitaxial films with promising potential for further enhancement of BP properties.

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“…As a new class of 2D materials, boron-phosphorus binary compound semiconductors have gained great attention in recent years. In experimental aspect, several thin film growth methods for synthesizing B-P binary compounds have been proposed, including chemical vapor deposition (CVD) [14][15][16] closespaced vapor transport (CVT) [17], flux growth [18], high pressure flux method [19], and epitaxy growth [20]. However, no experiment gave the clear structure information of layered B-P binary compounds.…”

Section: Introductionmentioning

confidence: 99%

BP ₅ monolayer with multiferroicity and negative Poisson’s ratio: a prediction by global optimization method

Wang

Sun

et al. 2017

2D Mater.

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Based on variable components global optimization algorithm, we predict a stable two-dimensional (2D) phase of boron phosphide with 1:5 stoichiometry, i.e. boron pentaphosphide (BP5) monolayer, which has a lower formation energy than that of the commonly believed graphitic phase (g-BP). BP5 monolayer is a multiferroic material with coupled ferroelasticity and ferroelectricity. The predicted reversible strain is up to 41.41%, which is the largest one among all reported ferroelastic materials. Due to the noncentrosymmetric structure and electronegativity differences between boron and phosphorus atoms, an in-plane spontaneous polarization of 3.26×10-10 C/m occurs in BP5. Moreover, the recently hunted negative Poisson's ratio property, is also observed in BP5. As an indirect semiconductor with a band gap of 1.34 eV, BP5 displays outstanding optical and electronic properties, for instance strongly anisotropic visible-light absorption and high carrier mobility. The rich and extraordinary properties of BP5 make it a potential nanomaterial for designing electromechanical or optoelectronic devices, such as nonvolatile memory with conveniently readable/writeable capability. Finally, we demonstrate that AlN (010) surface could be a suitable substrate for epitaxy growth of BP5 monolayer.n the past several years, two-dimensional (2D) materials with few layer atom thickness have been paid great attention due to their potential applications in electronics, optoelectronics, and energy conversion. are recently reported to possess large piezoelectricity 7 which would allow efficient mechanical-to-electrical energy conversion. Black phosphorene has been predicted to exhibit ferroelasticity, 8 which has potential application for designing nonvolatile memory devices. In addition, δ-P is predicted to be an auxetic material with a highly negative Poisson's ratio. 9 Auxetic materials have also attracted intense research interest recently, [10][11][12] since these materials possess some novel properties such as enhanced toughness and enhanced sound or vibration absorption. 13 Although 2D materials mentioned above usually possess outstanding properties, it's temporarily hard to adapt multifunctional application. Therefore, in order to integrate multi-functionality in 2D semiconductor devices, 2D materials that hold simultaneously two or more primary properties or functions are highly desirable.As a new class of 2D materials, boron-phosphorus binary compound semiconductors have gained great attention in recent years. In experimental aspect, several thin film growth methods for synthesizing B-P binary compounds have been proposed, including chemical vapor deposition (CVD) 14-16 close-spaced vapor transport (CVT), 17 flux growth, 18 high pressure flux method, 19 and epitaxy growth. 20 However, no experiment gave the clear structure information of layered B-P binary compounds. In theoretical aspect, all the studies [21][22][23] were prone to use the graphitic structure of boron-phosphide (g-BP) as the most stable phase, which may be wro...

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Close‐spaced crystal growth and characterization of BP crystals

Cited by 7 publications

References 12 publications

Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide

Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide

Epitaxy of Boron Phosphide on Aluminum Nitride(0001)/Sapphire Substrate

BP ₅ monolayer with multiferroicity and negative Poisson’s ratio: a prediction by global optimization method

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Close‐spaced crystal growth and characterization of BP crystals

Cited by 7 publications

References 12 publications

Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide

Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide

Epitaxy of Boron Phosphide on Aluminum Nitride(0001)/Sapphire Substrate

BP 5 monolayer with multiferroicity and negative Poisson’s ratio: a prediction by global optimization method

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BP ₅ monolayer with multiferroicity and negative Poisson’s ratio: a prediction by global optimization method