Closed-Loop dv/dt Control of SiC MOSFETs Yielding Minimal Losses and Machine Degradation

On performance evaluation of high‐power, high‐bandwidth current measurement technologies for SiC switching devices

“…Discrete SiC power MOSFETs are typically rated for currents of 5 A to 100 A [5][6][7][8][9]. Even at high voltage and current levels, the switching speed of SiC power MOSFETs reaches 10 kA∕μs and beyond [10][11][12], and more than 50 kV∕μs [5,[13][14][15]]. This highlights one major challenge in characterizing and operating SiC power MOSFETs, that is to accurately measure switched currents at both high amplitudes and fast transition speeds.…”

“…Discrete SiC power MOSFETs are typically rated for currents of $$5 \,\mathrm{A}$$ to $$100 \,\mathrm{A}$$ [5–9]. Even at high voltage and current levels, the switching speed of SiC power MOSFETs reaches $$10 \,\mathrm{k}\mathrm{A}/\umu\mathrm{s}$$ and beyond [10–12], and more than $$50 \,\mathrm{k}\mathrm{V}/\umu \mathrm{s}$$ [5, 13–15]. This highlights one major challenge in characterizing and operating SiC power MOSFETs, that is to accurately measure switched currents at both high amplitudes and fast transition speeds.…”