Closing photoconductive semiconductor switches

Loubriel, G.M.; Zutavern, F.J.; Hjalmarson, Harold P.; O'Malley, M.W.

doi:10.1109/ppc.1989.767499

Cited by 34 publications

(16 citation statements)

References 1 publication

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“…By contrast. certain PCSS'S, such as those made from semi-insulating GaAs, can be optically triggered into a sustained "on" state, called "lock-on"; a high gain, nonlinear state [1][2][3][4]. Harold P. Hjalmarson is at Sandia National Laboratories, Albuquerque.…”

Section: Introductionmentioning

confidence: 99%

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Steady-state properties of lock-on current filaments in GaAs

Kambour

Kang

Myles

et al. 2000

IEEE Trans. Plasma Sci.

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Abstract--Collective impact ionization has been used to exT1ain lock-on in semi-insulating GaAs under highvohage bias. W7ehave used this theory to study some of the steady state properties of lock-on current filaments. In steady state, the heat gained from the field is exactly compensated by the cooling due to phonon scattering. In the simplest approximation, the carrier distribution approaches a quasi-equ~lbrium Ma.xwell-Boltzmann distribution. In this repom we examine the validity of this approximation. \Ye fmd that this approximation leads to a filament carrier density which is much lower than the high density needed to achieve a quasiequilibrium distribution. Further work on this subject is in progress.

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Section: Introductionmentioning

confidence: 99%

“…In experiments [2,3] in which a Ga.% switch is lasertriggered at several initial biases, it has been found that after laser turn off, the switch goes to a low voltage. high current "on" state ("lock-on") and remains there for hundreds of nanoseconds.…”

Section: Introductionmentioning

confidence: 99%

Steady-state properties of lock-on current filaments in GaAs

Kambour

Kang

Myles

et al. 2000

IEEE Trans. Plasma Sci.

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“…In this way, the breakdown conditions can be controlled. This approach has been undertaken during the development of optically-triggered photoconductive semiconductor switches (PCSS's) [4][5][6]. Such switches are fabricated by attaching electrical contacts to a bulk semiconductor, usually GaAs or Si [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

“…In studies of electrical breakdown in these devices, the breakdown can be triggered into a steady state condition in which the carrier density, carrier temperature, and the electric field remain approximately constant [4][5][6]. In this condition, the current flows in filaments, and it is sustained by a field, called the "lockon" field, that is much lower than the intrinsic breakdown field (the breakdown duration can be limited to avoid heating of the lattice) [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

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Theory of optically-triggered electrical breakdown of semiconductors

Kambour

Hjalmarson²,

Myles³

2003 Annual Report Conference on Electrical Insulation and Dielectric Phenomena

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Abstract:In this paper, we describe a rate equation approach that leads to new insights about electrical breakdown in insulating and semiconducting materials. In this approach, the competition between carrier generation by impact ionization and carrier recombination by Auger and defect recombination leads to steady state solutions for the carrier generation rate, and it is the accessibility of these steady state solutions, for a given electric field, that governs whether breakdown does or does not occur. This approach leads to theoretical definitions for not only the intrinsic breakdown field but also other characteristic quantities. Results obtained for GaAs using a carrier distribution function calculated by both a Maxwellian approximation and an ensemble Monte Carlo method will be discussed.

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Lock-on physics in semi-insulating GaAs: Combination of trap-to-band impact ionization, moving electric fields and photon recycling

Dickens

Neuber

et al. 2018

Journal of Applied Physics

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The time-dependent photoconductive current response of semi-insulating GaAs is probed based on one-dimensional simulations, with a focus on the lock-on phenomenon. Our results capture most of the experimental observations. It is shown that trap-to-band impact ionization fuels local field enhancements, and photon recycling also plays an important role in pushing the device towards lock-on above a 3.5 kV/cm threshold field. The results compare well with actual data in terms of the magnitudes, the rise times, and the oscillatory behavior seen at higher currents. Moving multiple domains are predicted, and the response shown depended on the location of the photoexcitation spot relative to the electrodes.

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Closing photoconductive semiconductor switches

Cited by 34 publications

References 1 publication

Steady-state properties of lock-on current filaments in GaAs

Steady-state properties of lock-on current filaments in GaAs

Theory of optically-triggered electrical breakdown of semiconductors

Lock-on physics in semi-insulating GaAs: Combination of trap-to-band impact ionization, moving electric fields and photon recycling

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