CMOS 3D Hall probe for magnetic field measurement in MRI scanner

Schell, Jean-Baptiste; Kammerer, Jean-Baptiste; Hébrard, Luc; Breton, Élodie; Gounot, Daniel; Cuvillon, Loïc; Mathelin, Michel de

doi:10.1109/newcas.2012.6329070

Cited by 11 publications

(8 citation statements)

References 6 publications

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“…Examples of the three-dimensional study of magnetic fields have involved the use of 3-axis Hall-effect sensors [7] in a 3-axis scanning system [6]. Such sensors must comprise three individual sensors mounted orthogonally, either physically or created on a single substrate [8].…”

Section: Introductionmentioning

confidence: 99%

Volumetrically scanning the structure of stray-fields above grain-oriented electrical-steel using a variably angled TMR sensor

2017

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Section: Introductionmentioning

confidence: 99%

Volumetrically scanning the structure of stray-fields above grain-oriented electrical-steel using a variably angled TMR sensor

2017

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“…It provides low-cost solutions for the measurement of a wide range of magnetic fields with a medium resolution [2]. The main applications of integrated Hall-effect devices are in the fields of automotive, contactless current sensors, and medical engineering [3]. There are two kinds of sensors: the Horizontal Hall-effect Device (HHD), which measures the magnetic field perpendicular to the plane of the chip, and the Vertical Halleffect Device (VHD) which measures the magnetic field in the plane of the chip.…”

Section: Introductionmentioning

confidence: 99%

“…There are two kinds of sensors: the Horizontal Hall-effect Device (HHD), which measures the magnetic field perpendicular to the plane of the chip, and the Vertical Halleffect Device (VHD) which measures the magnetic field in the plane of the chip. When combining these two devices in a single chip we get a 3D-magnetometer [3]. For this kind of applications, the transducer (i.e.…”

Section: Introductionmentioning

confidence: 99%

“…For this kind of applications, the transducer (i.e. the Hall plate which transforms the magnetic field into a voltage) is integrated together with the power supply, the sensor conditioning circuit and the signal processing circuitry [2][3][4]. In this case, the use of EDA tools such as Cadence ® is mandatory to achieve an efficient design of the microsystem.…”

Section: Introductionmentioning

confidence: 99%

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Compact modeling of offset sources in vertical hall-effect devices

Madec

Osberger

Schell

et al. 2014

2014 IEEE 12th International New Circuits and Systems Conference (NEWCAS)

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Vertical Hall-effect devices are CMOS integrated sensors designed for the measurement of magnetic field in the plane of the chip. In such devices, systematic offset is a major issue which limits their performance. We recently developed a design-oriented compact model for such devices. In this paper, the model is improved and used to study the main features of the offset. There are two main phenomena that induce offset in the sensor: sensor imperfections (process deviation, mechanical stress …) which can be modeled by contact misalignments, and the modulation of the space charge region at the N-well/P-sub junction. Offset is modeled through 4 parameters which are extracted from offset measurement, and the model is validated with experimental results.

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“…Such sensors provide lowcost solutions to measure a wide range of magnetic fields with a medium resolution [2]. They are already widely used in the fields of automotive and contactless current sensors, and new applications are emerging in medicine [3]. There are two kinds of CMOS integrated Hall-effect sensors: the Horizontal Halleffect Device (HHD), which measures the magnetic field perpendicular to the plane of the chip, and the Vertical Halleffect Device (VHD) which measures the magnetic field in the plane of the chip.…”

Section: Introductionmentioning

confidence: 99%

An improved compact model of the electrical behaviour of the 5-contact vertical hall-effect device

Madec

Schell

Kammerer

et al. 2013

2013 IEEE 11th International New Circuits and Systems Conference (NEWCAS)

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The goal of this work is the improvement of an existing design-oriented model of the 5-contact vertical Halleffect sensor integrated in CMOS technology. Such a model should facilitate the work of designers, permitting them to simulate the sensor, the biasing and processing electronics together with the same electrical simulator. In this paper, focus is put on two physical effects that alter the electrical behavior of the sensor: the carrier velocity saturation under high electric field, and the limitation of the current lines depth into a deep sensor. The model has been achieved with a subtle mix of theoretical considerations, numerical simulations performed with COMSOL Multiphysics  and experimental data. It has been compared with experimental data gathered from two devices, one fabricated in a low-voltage (LV) standard technology and another one in a high-voltage (HV) technology. Simulations obtained with the compact model fit the actual behavior of the LV-sensor with a root mean square error of 0.35%, and 0.8% for the HV-VHD.I.

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CMOS 3D Hall probe for magnetic field measurement in MRI scanner

Cited by 11 publications

References 6 publications

Volumetrically scanning the structure of stray-fields above grain-oriented electrical-steel using a variably angled TMR sensor

Volumetrically scanning the structure of stray-fields above grain-oriented electrical-steel using a variably angled TMR sensor

Compact modeling of offset sources in vertical hall-effect devices

An improved compact model of the electrical behaviour of the 5-contact vertical hall-effect device

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